Manufacturing method of thin film semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Satoshi Teramoto
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Abstract
A microwave is applied, in an atmosphere that prohibits formation of plasma, to an amorphous silicon film that has been formed on a glass substrate by a vapor phase method. Since the microwave is absorbed selectively by a surface layer of the amorphous silicon film due to the skin effect, the amorphous silicon film can be heated selectively and thereby modified into a crystalline silicon film without heating the glass substrate.
Claims36
A method of manufacturing a semiconductor, comprising the steps of:
- forming an amorphous semiconductor film comprising silicon over a substrate having an insulating surface wherein said semiconductor film contains hydrogen;
- and
- irradiating said amorphous semiconductor film with a microwave to modify said amorphous film into a crystalline semiconductor film.
A method of manufacturing a semiconductor, comprising the steps of:
- forming an amorphous semiconductor film over a substrate having an insulating surface wherein said semiconductor film contains hydrogen;
- and
- irradiating said amorphous semiconductor film with a microwave to modify said amorphous semiconductor film into a crystalline semiconductor film,
- wherein said microwave is applied with said amorphous semiconductor film maintained in a sufficiently low pressure to prevent a generation of plasma.
A method of manufacturing a semiconductor, comprising the steps of:
- disposing a metal containing substance in contact with an amorphous semiconductor film comprising silicon formed over a substrate having an insulating surface, said metal being capable of promoting a crystallization of said semiconductor film wherein said semiconductor film contains hydrogen;
- and
- irradiating said amorphous semiconductor film with a microwave to modify said amorphous semiconductor film into a crystalline semiconductor film.
A method of manufacturing a semiconductor, comprising the steps of:
- disposing a metal containing substance in contact with an amorphous semiconductor film comprising silicon formed over a substrate having an insulating surface wherein said semiconductor film contains hydrogen;
- and
- irradiating said amorphous semiconductor film with a microwave to modify said amorphous semiconductor film into a crystalline semiconductor film,
- wherein said microwave is applied with said amorphous semiconductor film maintained in a sufficiently low pressure to prevent a generation of plasma.
Dependencies are inferred from the claim text.