Method for making shallow trench marks
AssigneeAdvanced Micro Devices, Inc.
InventorsLarry Yu Wang, Craig Sander, Anna Minvielle
Life of this patent
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Abstract
The separate formation of alignment marks and manufacturing a semiconductor device comprising photolithographically printing circuit patterns is avoided by utilizing trenches formed when etching to form shallow isolation trenches, thereby increasing manufacturing throughput and reducing costs. Embodiments include utilizing alignment trenches having a depth of about 2,400.ANG. to less than about 4,000.ANG., e.g., 3,000.ANG., formed substantially simultaneously with forming isolation trenches having substantially the same depth as the alignment trenches.
Claims10
A method of manufacturing a semiconductor device, which method comprises:
- providing a mask on a main surface of a semiconductor substrate or an epitaxial layer formed on the semiconductor substrate, which mask contains:
- a first opening for forming a first trench in an area of the main surface outside of a device forming area;
- a second opening for forming a second trench surrounding an active region in the device forming area;
- and
- etching the main surface through the openings in the mask to substantially simultaneously form the:
- first trench, constituting an alignment mark, in the area outside the device forming area;
- and
- second trench for isolating an active region in the device forming area.
Dependencies are inferred from the claim text.