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US 5,963,812 AGranted
Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion
AssigneeCanon Kabushiki Kaisha
InventorsYuzo Kataoka, Tetsuo Asaba, Kenji Makino, Hiroshi Yuzurihara, Kei Fujita, Seiji Kamei, Yutaka Akino, Yutaka Yuge, Mineo Shimotsusa, Hideshi Kuwabara
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Abstract
An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
Claims5
A method of manufacturing a semiconductor apparatus by forming a side wall comprising:
- (a) forming a gate electrode comprising polycrystalline silicon or a silicide;
- (b) forming an insulating film on said gate electrode;
- (c) forming a first source and drain region of p or n type;
- (d) forming by chemical vapor deposition process, an aluminum side wall selectively only on a side wall of said gate electrode on which the insulating film is formed;
- (e) injecting ions to form a second source and drain region having an impurity concentration higher than that of said first source and drain region;
- (f) removing the metal side wall and the insulating film;
- and
- (g) forming an oxide film over said gate electrode and said first and second source and drain regions, after step (f).
5 more elements
Dependencies are inferred from the claim text.