Semiconductor device having nitrogen enhanced high permittivity gate insulating layer and fabrication thereof

Abstract

A semiconductor device having a nitrogen enhanced high permittivity gate insulating layer and a process for manufacturing such a device is provided. Consistent with one embodiment, a high permittivity gate insulating layer is formed over a substrate using a nitrogen bearing gas. The gate insulating layer has a dielectric constant of at least 20. At least one gate electrode is formed over the high permittivity gate insulating layer. An optional nitride capping layer can be formed between the high permittivity gate insulating layer and the gate electrode. The nitrogen bearing gas may include one or more nitrogen bearing species, such as NO, NF.sub.3 or N2, for example. The use of nitrogen in the formation of a high permittivity gate insulating layer can, for example, reduce oxidation of the high permittivity layer and increase the ability to control the characteristics of the gate insulating layer.

Dependencies are inferred from the claim text.