Method of manufacturing semiconductor devices

A method for manufacturing a thin-film-transistor, comprising the steps of:

• depositing a first conductive layer on a substrate;
• patterning said first conductive layer to form a gate electrode;
• depositing a first insulating layer on said substrate;
• depositing a semiconductor layer on said first insulating layer;
• depositing a doped semiconductor layer on said semiconductor layer;
• depositing a second insulating layer on said doped semiconductor layer;
• patterning said second insulating layer to form an island in correspondence with said gate electrode;
• depositing a second conductive layer on said island and said doped semiconductor layer;
• in a single step, removing first portions of said second metal layer, said doped semiconductor layer and said island to form first and second terminals of thin-film-transistor and exposing a first portion of said semiconductor layer, and removing second portions of said second conductive layer, said doped semiconductor layer and said semiconductor layer;
• depositing a passivation layer on said source drain electrodes, said first portion of said semiconductor layer, and said first insulating layer;
• removing a portion of said passivation layer overlying said first terminal to expose a portion of said first terminal;
• depositing a transparent conductive layer on said passivation layer and on said exposed portion of said first terminal;
• and
• patterning said transparent conductive layer to form an electrode electrically connected to said first terminal.