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US 5,963,792 AGranted
Use of an oxide surface to facilitate gate break on a carrier substrate for a semiconductor device
AssigneeMicron Technology, Inc.
InventorRichard W. Wensel
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Abstract
An encapsulant molding technique used in chip-on-board encapsulation wherein an oxidizable metal layer is patterned on a substrate and the oxidizable metal layer is oxidized to facilitate removal of unwanted encapsulant material. The oxidizable metal layer which adheres to the substrate is applied over a specific portion of the substrate. The oxidizable metal layer is oxidized to form a metal oxide layer which does not adhere to encapsulant materials.
Claims3
A method of encapsulating a semiconductor device, comprising:
- providing a carrier substrate;
- forming an oxide-surfaced material layer on said carrier substrate;
- attaching a semiconductor device to said carrier substrate after forming said oxide-surfaced material layer;
- placing an encapsulant mold having a cavity over said semiconductor device, wherein said semiconductor device resides within said encapsulant mold cavity and wherein said encapsulant mold includes an interconnection channel, a portion of said oxide-surfaced material layer forming a side of said interconnection channel adjacent said carrier substrate;
- injecting an encapsulant material into said encapsulant mold cavity through said interconnection channel, wherein said encapsulant material substantially solidifies in said encapsulant mold cavity and said interconnection channel;
- removing said encapsulant mold;
- and
- removing said substantially solidified encapsulant material residing over oxide-surfaced material layer.
5 more elements
Dependencies are inferred from the claim text.