Method of producing gallium nitride semiconductor light emitting device

A method of producing a gallium nitride semiconductor light emitting device, comprising:

• (a) forming an undoped gallium nitride low temperature growing buffer layer on a substrate;
• (b) forming a magnesium-doped gallium nitride layer expressed by general formula Al.sub.x Ga.sub.1-x N, the magnesium-doped gallium nitride layer being formed over the undoped gallium nitride low temperature growing buffer layer;
• (c) forming a contact layer expressed by general formula In.sub.x Al.sub.y Ga.sub.1-x-y N, the contact layer being formed over the magnesium-doped gallium nitride layer;
• (d) forming a clad layer expressed by general formula In.sub.x Al.sub.y Ga.sub.1-x-y N, the clad layer being formed over the contact layer;
• (e) forming an optical guide layer expressed by general formula In.sub.x Al.sub.y Ga.sub.1-x-y N, the optical guide layer being formed over the clad layer;
• (f) forming an activation layer over the optical guide layer;
• (g) forming a magnesium-doped p-type gallium nitride optical guide layer over the activation layer;
• (h) forming a clad layer expressed by general formula In.sub.x Al.sub.y Ga.sub.1-x-y N, over the magnesium-doped p-type gallium nitride optical guide layer;
• (i) forming a contact layer, expressed by general formula In.sub.x Al.sub.y Ga.sub.1-x-y N, over the clad layer which was formed over the magnesium-doped p-type gallium nitride optical guide layer;
• and
• (j) forming an electrode over the contact layer which was formed over the contact layer, the clad layer and the magnesium-doped p-type gallium nitride optical guide layer.