Method for producing near net shape planar sputtering targets and an intermediate therefor
AssigneeTosoh SMD, Inc.
InventorDavid E. Stellrecht
Life of this patent
Estimating the term…
Loading patent…
AssigneeTosoh SMD, Inc.
InventorDavid E. Stellrecht
Estimating the term…
A preferred method for producing a pair of sputter targets includes the step of machining fist and second backing plates to form surfaces having near net profiles characteristic of an ion source, the sputtering material and the target shape. A preform is constructed which includes the first backing plate, a first powder layer abutting against the first backing plate, a spacer abutting against the first powder layer, a second powder layer abutting against the spacer, and the second backing plate abutting against the second powder layer. In an especially preferred form, the spacer comprises a pair of metal plates separated by a layer of bond-resistant material such as boron nitride. The preform is heated and isostatically pressed to consolidate the powder layers to form the pair of sputter targets and to diffusion bond the targets to corresponding backing plates. The method promotes the formation of uniformly even sputtering surfaces on the targets.
A method for producing a first sputter target and a second sputter target and a first backing plate and a second backing plate wherein said first target is diffusion bonded to said first backing plate and said second target is diffusion bonded to said second backing plate, said method comprising:
A method for producing sputtering targets comprising the steps of:
An assembly useful in the production of sputtering targets comprising:
A method for producing sputtering targets comprising the steps of
Dependencies are inferred from the claim text.