Method of erasing a flash memory cell and device for erasing the same

A method of erasing a readable, writable and erasable flash memory cell, comprising the steps of;

• applying a drain bias voltage for erasing to any one sector of a memory cell array divided into a plurality of sectors;
• and
• applying a drain bias voltage for erasing to a next sector before said former sector is completely erased, whereby said sectors are erased sequentially.

A device for erasing a readable, writable and erasable flash memory cell, comprising:

• a charge pump for applying a negative bias voltage to a sector of a plurality of sectors of a cell array through a Z-decoder;
• a drain bias voltage generating generator for generating a drain bias voltage;
• a means for supplying a drain bias voltage for erasing to said sectors sequentially, said means supplying a drain bias voltage to any one of said sectors and then supplying a drain bias voltage for erasing to a next sector before said sector is completely erased.

A method of erasing a readable, writable and erasable flash memory cell, comprising the steps of:

• applying a negative bias voltage for erasing to any one sector of a memory cell array divided into a plurality of sectors;
• and
• applying a negative bias voltage for erasing to a next sector before said former sector is completely erased, whereby said sectors are erased sequentially.

A device for erasing a readable, writable and erasable flash memory cell, comprising:

• a negative charge pump for applying a negative bias voltage to a sector of a plurality of sectors of a cell array;
• a means for supplying a negative bias voltage for erasing to said sectors sequentially, said means supplying a negative bias voltage to any one of said sectors and then supplying a negative bias voltage for erasing to a next sector before said sector is completely erased.