Liquid crystal display with improved electrode adhesion and method for manufacturing same
AssigneeLG Electronics Inc.
InventorWoong Kwon Kim
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a liquid crystal display device includes the steps of forming a switching element having an electrode on substrate, forming an organic layer over the substrate and the switching element, forming an ion doped layer by doping ions selected from a group consisting of Si, P, Ge, B, As, Ba, Ti, Tb, and Bi into the organic layer, forming a contact hole in the ion doped layer exposing a portion of the electrode, and forming an inorganic layer connected to the electrode through the contact hole on the ion doped layer.
Claims19
A method for manufacturing a liquid crystal display device comprising the steps of:
- forming a switching element having an electrode on a substrate;
- forming an organic layer over the substrate and the switching element;
- forming an ion doped layer by doping ions selected from a group consisting of Si, P, Ge, B, As, Ba, Ti, Tb, and Bi into a top portion of the organic layer;
- forming a contact hole in the ion doped layer exposing a portion of the electrode;
- and
- forming an inorganic layer connected to the electrode through the contact hole on the ion doped layer.
A liquid crystal display device comprising:
- a substrate;
- a switching element having an electrode on the substrate;
- an organic layer over the switching element and the substrate;
- an ion doped layer including ions selected from Si, P, Ge, B, As, Ba, Ti, Tb, and Bi in a top portion of the organic layer;
- a contact hole in the ion doped layer exposing the electrode;
- and
- an inorganic layer connected to the electrode through the contact hole.
A liquid crystal display device comprising:
- an organic layer including at least one of a C--H and a C--F bond structure on a substrate;
- a doped layer in a top portion of the organic layer including ions selected from a group of ions consisting of Si, P, Ge, B, As, Ba, Ti, Tb and Bi;
- and
- an inorganic layer formed on the doped layer.
A method of forming liquid crystal display device comprising the steps of:
- forming a thin film transistor having an electrode on a substrate;
- forming an organic protection layer over the thin film transistor and the substrate;
- doping a surface portion of the organic protection layer with ions selected from a group consisting of Si, P, Ge, B, As, Ba, Ti, Tb, and Bi to form an ion doped layer;
- forming a contact hole in the organic protection layer and the ion doped layer to expose the electrode;
- and
- forming a pixel electrode in the contact hole and over a portion of the ion doped layer.
A method of forming liquid crystal display device comprising the steps of:
- forming a thin film transistor having an electrode on a substrate;
- forming an organic protection layer over the thin film transistor and the substrate;
- doping a surface portion of the organic protection layer with ions selected from a group consisting of Si, P, Ge, B, As, Ba, Ti, Tb, and Bi to form an ion doped layer;
- forming a contact hole in the organic protection layer and the ion doped layer to expose the electrode;
- and
- forming a pixel electrode in the contact hole and over a portion of the ion doped layer,
- wherein the step of forming a contact hole in the organic protection layer and the ion doped layer includes the steps of:
- forming a first photoresist layer over the ion doped layer;
- patterning the first photoresist layer;
- removing portions of the ion doped layer and the organic protection layer to form the contact hole;
- and
- removing the first photoresist layer.
A method of forming liquid crystal display device comprising the steps of:
- forming a thin film transistor having an electrode on a substrate;
- forming an organic protection layer over the thin film transistor and the substrate;
- doping a surface portion of the organic protection layer with ions selected from a group consisting of Si, P, Ge, B, As, Ba, Ti, Tb, and Bi to form an ion doped layer;
- forming a contact hole in the organic protection layer and the ion doped layer to expose the electrode;
- and
- forming a pixel electrode in the contact hole and over a portion of the ion doped layer,
- wherein the step of forming a pixel electrode in the contact hole and over a portion of the ion doped layer includes the steps of:
- forming an inorganic conductive layer over the ion doped layer and in the contact hole to be in contact with the electrode;
- forming a second photoresist layer over the inorganic conductive layer;
- patterning the second photoresist layer;
- removing exposed portions of the inorganic conductive layer;
- and
- removing the second photoresist layer.
Dependencies are inferred from the claim text.