Liquid crystal display device containing openings in a protective layer to compensate for defect and method of producing the same

A method of producing a liquid crystal display device comprising a first transparent substrate and a second transparent substrate opposing each other with a certain gap, a liquid crystal filled between the first and second substrates, signal electrodes and picture-element electrodes forming each of a plurality of display picture-elements respectively disposed on the first substrate, thin film diodes provided between the signal electrode and each picture-element electrode as switching elements for controlling a flow of current to each picture-element electrode, an opposing electrode provided on the second substrate via each picture-element electrode on the first substrate and the liquid crystal, said method comprising:

• a first step for forming a lower electrode layer material on the entire surface of the first substrate, comprising subjecting a first photoresist to a patterning treatment on the lower electrode layer material, performing an etching treatment using the first photoresist as an etching mask so as to form a lower electrode layer of the thin film diodes, and then removing the first photoresist;
• a second step for forming an anodic oxidation layer on the surface of the lower electrode layer by an anodic oxidation treatment, said anodic oxidation layer serving as a non-linear resistor layer of the thin film diode;
• a third step for forming a transparent electrode film on an entire surface of the first substrate on which the lower electrode layer and the anodic oxidation layer on the lower electrode layer are formed, comprising subjecting a second photoresist to a patterning treatment on the transparent electrode film, performing an etching treatment using the second photoresist as an etching mask to form an upper electrode, the signal electrodes and picture-element electrodes on the thin film diode, and then removing the second photoresist;
• and
• a fourth step for forming the protection film on the entire surface of the first substrate which was subject to the first and second steps, comprising subjecting a third photoresist to a patterning treatment on the protection film, performing an etching treatment using the third photoresist as an etching mask to define openings in corresponding positions between the picture-element electrodes of the protection film, between the signal electrode and the picture-element electrode, and between the signal electrodes, and removing remaining portions of the lower electrodes and the transparent electrode film inside each opening.

A method of producing a liquid crystal display device comprising a first transparent substrate and a second transparent substrate opposing each other with a certain gap, a liquid crystal filled between the first and second substrates, scanning electrodes, signal electrodes and picture-element electrodes forming each of a plurality of display picture-elements respectively disposed on the first substrate, thin film transistors provided between the scanning electrodes, the signal electrodes and each picture-element electrode as switching elements for controlling a flow of current to each picture-element electrode, said method comprising,

• a first step for forming an electrode film made of respective electrode materials on the first substrate for the scanning electrodes, the signal electrodes, each picture-element electrode, a gate electrode, a source electrode, and a drain electrode forming each thin film transistor, comprising subjecting a photoresist to a patterning treatment on the electrode film, and repetitively performing an etching treatment using a patterned photoresist as an etching mask;
• and
• a second step for forming a protection film on the entire surface of the substrate on which each electrode and the thin film transistors are formed, comprising subjecting the photoresist to a patterning treatment on the protection film, etching the protection film using the patterned photoresist as an etching mask, defining each opening in positions corresponding to at least between the signal electrode and the picture-element electrode, between the scanning electrodes, and between the signal electrodes, and thereafter removing the remaining portion of the electrode film inside each opening.

A method of producing a liquid crystal display device comprising a first transparent substrate and a second transparent substrate opposing each other with a certain gap, a liquid crystal filled between the first and second substrates, scanning electrodes, signal electrodes and picture-element electrodes forming each of a plurality of display picture-elements respectively disposed on the first substrate, thin film transistors provided between the scanning electrode, between the signal electrode and each picture-element electrode as switching elements for controlling a flow of current to each picture-element electrode, said method comprising:

• a first step for forming a gate electrode material serving as the scanning electrodes on an entire surface of the first electrodes, comprising subjecting a first photoresist to a patterning treatment on the gate electrode material, etching the gate electrode material using the first photoresist as an etching mask, forming a first IC driving connection part for driving a gate electrode of thin film transistors, the scanning electrodes and the liquid crystal display device, and then removing the first photoresist;
• a second step for forming a gate insulating film on an entire surface of the substrate which was subject to the first step, comprising subjecting a second photoresist to a patterning treatment on the gate insulating film, performing an etching treatment using the second photoresist as an etching mask to remove the gate insulating film on the first driving IC connection part, and then removing the second photoresist;
• a third step for subsequently forming a semiconductor layer and a channel stopper layer on the gate insulating film, comprising subjecting a third photoresist to a patterning treatment on the channel stopper layer, performing an etching treatment using the third photoresist as an etching mask, subjecting the channel stopper layer to a patterning treatment on the semiconductor layer, and then removing the third photoresist;
• a fourth step for subjecting a fourth photoresist to a patterning treatment on the semiconductor layer and the channel stopper layer, comprising etching the semiconductor layer using the fourth photoresist as an etching mask to form a semiconductor layer having a predetermined shape opposing the gate electrode, and then removing the fourth photoresist;
• a fifth step for forming a film serving as a material making an ohmic contact layer on an entire surface of the substrate which was subject to the fourth step, comprising subjecting a fifth photoresist to a patterning treatment on the film, etching the film using the fifth photoresist as an etching mask to form the ohmic contact layer, and then removing the fifth photoresist;
• a sixth step for forming a transparent electrode film on an entire surface of the substrate which was subject to the fifth step, comprising subjecting a sixth photoresist to a patterning treatment on the transparent electrode film, etching the transparent electrode film using the sixth photoresist as an etching mask to form the picture-element electrodes, and then removing the sixth photoresist,
• a seventh step for forming the source electrode and the drain electrode of the thin film transistors, and a film serving as a material of the signal electrodes on the entire surface of the substrate which was subject to the sixth step, comprising subjecting a seventh photoresist to a patterning treatment on the film, performing an etching treatment using the seventh photoresist as an etching mask to form the source electrode, the drain electrode, the signal electrodes and a second driving IC connection part, and then removing the seventh photoresist;
• an eighth step for forming a protection film on the entire surface of the substrate which was subject to the seventh step, comprising subjecting an eighth photoresist to a patterning treatment on the protection film, etching the protection film using the eighth photoresist as an etching mask to define openings in a position corresponding to at least one portion between the scanning electrode and the picture-element electrode, between the signal electrode and the picture-element electrode, between the scanning electrodes, between the signal electrodes, between the scanning electrode and the signal electrode, and openings in a position corresponding to the first and second driving IC connection parts;
• a ninth step forming a resin film to cover the openings defined in the positions corresponding to the first and second driving IC connection parts of the protection film;
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• a tenth step for removing the remaining portion of the electrode film inside each opening which is not covered with the resin film using the resin film, the eighth photoresist or the protection film as an etching mask.