US 5,963,097 AGranted

Low-noise amplifier

OwnerAlexander Viktorovich Garachtchenko, Samuel Suresh Martininventors

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Abstract

A low-noise amplifier is disclosed that is capable of amplifying a signal with high gain (e.g., >60 dB) and low noise (e.g., <2 nV/Hz.sup.-1/2) over a large frequency bandwidth (e.g., from 1 Hz to 1 MHz) and with a high input impedance (e.g., >10.sup.6 .OMEGA.), high common mode rejection and high immunity to external noise sources. An illustrative embodiment of the present invention comprises: a first field-effect transistor having a first lead, a second lead and a third lead; a second field-effect transistor having a first lead, a second lead and a third lead, wherein the first lead of the first field-effect transistor is electrically connected to the first lead of the second field-effect transistor, the second lead of the first field-effect transistor is electrically connected to the second lead of the second field-effect transistor, and the third lead of the first field-effect transistor is electrically connected to the third lead of the second field-effect transistor; and a first bipolar junction transistor having a first lead, a second lead and a third lead, wherein the first lead of the first bipolar junction transistor is electrically connected to the first lead of the first field-effect transistor.

Claims7

Dependent claims

An apparatus comprising:

a first field-effect transistor having a first lead, a second lead and a third lead;
a second field-effect transistor having a first lead, a second lead and a third lead;
a first bipolar junction transistor having a first lead, a second lead and a third lead, wherein said second lead of said first bipolar junction transistor is electrically connected to said first lead of said first field-effect transistor;
a resistor having a first lead and a second lead, wherein said first lead of said resistor is electrically connected to said second lead of said first field-effect transistor, and said second lead of said resistor is electrically connected to said second lead of said second field-effect transistor;
a third field-effect transistor having a first lead, a second lead and a third lead, wherein said first lead of said third field-effect transistor is electrically connected to said first lead of said first field-effect transistor, said second lead of said third field-effect transistor is electrically connected to said second lead of said first field-effect transistor, and said third lead of said third field-effect transistor is electrically connected to said third lad of said third field-effect transistor;
and
a fourth field-effect transistor having a first lead, a second lead and a third lead, wherein said first lead of said fourth field-effect transistor is electrically connected to said first lead of said second field-effect transistor, said second lead of said fourth field-effect transistor is electrically connected to said second lead of said second field-effect transistor, and said third lead of said fourth field-effect transistor is electrically connected to said third lead of said second field-effect transistor, further comprising:
a second bipolar junction transistor having a first lead, a second lead and a third lead, wherein said second lead of said second bipolar junction transistor is electrically connected to said first lead of said second field-effect transistor.

5 more elements

An apparatus comprising:

a first field-effect transistor having a first lead, a second lead, and a third lead;
a first bipolar junction transistor having a first lead, a second lead, and a third lead, wherein said first lead of said first field-effect transistor is electrically connected to said second lead of said first bipolar junction transistor;
a second field-effect transistor having a first lead, a second lead, and a third lead;
a second bipolar junction transistor having a first lead, a second lead, and a third lead, wherein said first lead of said second field-effect transistor is electrically connected to said second lead of said second bipolar junction transistor;
and
an amplifier having an inverting input, a non-inverting input and an output, wherein said first lead of said first bipolar junction transistor is electrically connected to said non-inverting input, said first lead of said second bipolar junction transistor is electrically connected to said inverting input, and said output of said amplifier is electrically connected to said third lead of said second field-effect transistor.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/014,325Filed 27 Jan 1998
Granted: 5 Oct 1999
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H03F 3/45183
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Indexing scheme relating to amplifiers: noise reduction and elimination in amplifier
H03F 2203/45371
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