Circuit with hot-electron protection and method
AssigneeMotorola, Inc.
InventorsJoseph Shor, Mark Yosefin, Dan Mauricio Bruck
Life of this patent
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AssigneeMotorola, Inc.
InventorsJoseph Shor, Mark Yosefin, Dan Mauricio Bruck
Estimating the term…
In a circuit (10), a first N-FET (N1) and a second N-FET (N2) are coupled serially between a node (15) and ground (93). The circuit (10) accommodates a first excursion (85) of a first signal (IN) at the gates of the first N-FET (N1) which is higher than the maximum allowable drain-source voltage for N-FETs. The voltage of a second signal (OUT) between the node (15) and ground (93) is distributed across the first and the second N-FETs (N1, N2). The gate voltage of the second N-FET (N2) is not constant, but controlled by a control circuit (20) receiving signals the first signal (IN) and, optionally, the second signal (OUT). With the variation of the gate voltage for the second N-FET (N2), the size of both transistors (N1, N2) can be reduced and the fall time (T.sub.F) of the second signal (OUT) can be reduced.
A circuit comprising:
A circuit comprising:
A circuit comprising:
A method for pulling a node to a ground reference potential by serially coupled first and second transistors, said first transistor being coupled to said ground reference potential and said second transistor being coupled to said node,
A circuit comprising:
Dependencies are inferred from the claim text.