SOI transistor having a self-aligned body contact

An SOI field effect transistor having a self-aligned body contact and comprising a source and drain doped with a first polarity and formed in a silicon layer, having a silicon top surface, doped with a second polarity and disposed above an insulating substrate, and a gate insulator and gate, having a gate top surface, disposed above a body portion of said silicon layer between said source and drain and extending a gate length along a first axis passing between said source and drain, further comprising:

• a gate extension connected to said gate and disposed directly above said gate insulator and a collection portion of said silicon layer, said body portion and said collection portion being adjacent, whereby minority carriers may flow from said body portion to said collection portion;
• raised source and drain contact members, raised above said silicon top surface and capped with a cap dielectric, having a cap top surface above said gate top surface;
• a collection electrode doped with said second polarity and disposed in contact with said silicon layer on a collection side of said gate extension opposite said gate, whereby minority carriers may flow from said body through said collection portion of said silicon layer to said collection electrode, said gate extension having gate sidewall support members connected to said gate and disposed between said collection electrode and said source and drain, said collection electrode being isolated from said gate and from said raised source and drain contact members by at least one insulating sidewall.