US 5,962,892 A · MISFET and complementary MISFET device having high performance source and drain diffusion layer

Abstract

A source and drain diffusion layer of a transistor has a junction of a shallow depth and low in parasitic resistance and parasitic capacitance. The transistor includes a gate insulator formed on a principal plane of a semiconductor substrate, a gate electrode formed on the gate insulator, and source and drain diffusion layers of one conductivity type formed on the principal plane of the semiconductor substrate across the gate electrode. A semiconductor thin film layer doped with an impurity of the same conductivity type is selectively deposited on the principal plane of the semiconductor substrate on which the source and drain diffusion layers are formed. A facet face is formed at an end portion of the semiconductor thin film which opposes to a sidewall of the gate electrode. The facet face has an inclination angle between a sidewall face of the gate electrode and the principal plane of the semiconductor substrate.

Claims12

Dependent claims

An MISFET, comprising:

a gate insulator formed on a principal plane of a semiconductor substrate;
a gate electrode formed on said gate insulator;
source and drain diffusion layers of one conductivity type disposed on said principal plane of said semiconductor substrate across said gate electrode wherein, said source and drain diffusion layers comprising a uniformly doped semiconductor thin film layer doped with an impurity of the one conductivity type and selectively deposited on said principal plane of said semiconductor substrate;
and
a facet face formed at an end portion of said semiconductor thin film next to a sidewall of said gate electrode, said facet face having an inclination angle between a sidewall face of said gate electrode and said principal plane of said semiconductor substrate.

2 more elements

Dependencies are inferred from the claim text.

MISFET and complementary MISFET device having high performance source and drain diffusion layer

Life of this patent

MISFET and complementary MISFET device having high performance source and drain diffusion layer

Life of this patent

Abstract

Claims12