Metal-oxide-semiconductor capacitor

A metal-oxide-semiconductor (MOS) capacitor, comprising:

• a capacitor gate region separated from an underlying substrate by a dielectric layer;
• at least one first source/drain diffusion region formed in the substrate from dopants of a first dopant type, wherein the first source/drain diffusion region is adjacent to a region in the substrate underlying the capacitor gate region;
• a channel region in the substrate underlying the capacitor gate region, at least part of the channel region comprising implanted dopants of the first dopant type such that an inversion layer is present in the channel region when the capacitor gate region and the substrate are at approximately the same voltage;
• and
• wherein the implanted dopants of the first dopant type in at least part of the channel region are received while implanting dopants into a substrate region which at least partially underlies a gate region of a field effect transistor (FET), and the FET has a second source/drain diffusion having dopants of a type opposite to the first dopant type.

A metal-oxide-semiconductor (MOS) capacitor, comprising:

• a capacitor gate region separated from an underlying substrate by a dielectric layer;
• at least one first source/drain diffusion region formed in the substrate from dopants of a first conductivity type, wherein the first source/drain diffusion region is adjacent to a region in the substrate underlying the capacitor gate region;
• a channel region in the substrate underlying the capacitor gate region, at least part of the channel region comprising implanted dopants of the first conductivity type such that a threshold voltage magnitude of less than 0.3 volts applied between the capacitor gate region and the substrate forms an inversion layer in the channel region;
• and
• wherein the implanted dopants of the first conductivity type in at least part of the channel region are received while implanting dopants into a substrate region which at least partially underlies a gate region of a field effect transistor (FET), and the FET has a second source/drain diffusion having dopants of a second conductivity type.

A metal-oxide-semiconductor (MOS) capacitor, comprising:

• a capacitor gate region separated from an underlying substrate by a dielectric layer;
• at least one first source/drain diffusion region formed in the substrate from dopants of a first conductivity type, wherein the first source/drain diffusion region is adjacent to a region in the substrate underlying the capacitor gate region;
• a channel region in the substrate underlying the capacitor gate region, at least part of the channel region comprising implanted dopants of the first conductivity type such that an inversion layer is present in the channel region when the capacitor gate region and the substrate are at approximately the same voltage;
• and
• wherein the implanted dopants of the first conductivity type in at least part of the channel region are received while implanting dopants into a substrate region which at least partially underlies a gate region of a field effect transistor (FET), and the FET has a second source/drain diffusion having dopants of a second conductivity type.