Light emitting device, wafer for light emitting device, and method of preparing the same
AssigneeSumitomo Electric Industries, Ltd.
InventorsKensaku Motoki, Mitsuru Shimazu, Yoshiki Miura
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Abstract
A light emitting device having higher blue luminance is obtained. A gallium nitride compound layer is formed on a GaAs substrate, and thereafter the GaAs substrate is at least partially removed for forming the light emitting device. Due to the removal of the GaAs substrate, the quantity of light absorption is reduced as compared with the case of leaving the overall GaAs substrate. Thus, a light emitting device having high blue luminance is obtained.
Claims19
A wafer for a light emitting device comprising a GaN substrate including a stripe patterned insulating film, a GaN buffer layer and a GaN epitaxial layer, wherein said stripe patterned insulating film comprises a plurality of mutually spaced apart first stripes, said GaN buffer layer is disposed as second stripes arranged in spaces between said first stripes, and said GaN epitaxial layer is disposed on and covering said first stripes and said second stripes.
A blue or blue-green light emitting device comprising:
- an insulating film comprising insulating film stripes arranged adjacent and spaced apart from one another to form a stripe pattern of said stripes;
- and
- a gallium nitride compound layer;
- wherein said gallium nitride compound layer includes:
- a GaN buffer layer comprising GaN buffer layer stripes arranged between said insulating film stripes;
- a first GaN epitaxial layer;
- a first AlGaN epitaxial layer;
- a blue or blue-green luminescing layer containing InGaN;
- a second AlGaN epitaxial layer;
- and a second GaN epitaxial layer.
Dependencies are inferred from the claim text.