Semiconductor laser device having a COD-preventing structure
AssigneeFurukawa Electric Co., Ltd.
InventorsMichio Ohkubo, Tetsuro Ijichi, Yoshikazu Ikegami
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Abstract
In a semiconductor laser device comprising a semiconductor laser main body having an active layer formed between a pair of cladding layers, and a non-absorbing layer of InGaP formed on the facets of the semiconductor laser main body and having a band gap greater than the band gap of the active layer, a diffusion blocking layer of, for example, Si, SiN or Ge is formed on the surface of the non-absorbing layer, and a di-electric protective layer of, for example, AlO.sub.x, SiO.sub.x, SiN.sub.x or MgO.sub.x for regulating reflectance at the facets and protecting the non-absorbing layer is formed on the diffusion blocking layer.
Claims14
A semiconductor laser device comprising:
- a semiconductor laser main body having an active layer formed between a pair of cladding layers, a non-absorbing layer of InGaP formed on a facet of said semiconductor laser main body and having a band gap greater than the band gap of said active layer, a diffusion blocking layer formed on a surface of said non-absorbing layer, and a dielectric protective layer formed on said diffusion blocking layer, said diffusion blocking layer having a thickness of 2 to 30 nm.
Dependencies are inferred from the claim text.