Semiconductor acceleration sensor using semiconductor microworking technology

A semiconductor acceleration sensor comprising:

• a moving electrode semiconductor substrate positioned between a first fixed electrode semiconductor substrate and a second fixed electrode semiconductor substrate, the moving electrode semiconductor substrate formed with a first cantilever connected to a first inertial weight on a first side, and a second cantilever connected to a second inertial weight on a second side;
• a first moving electrode provided on the first inertial weight, at a position opposed to a first fixed electrode on the first fixed electrode semiconductor substrate;
• and
• a second moving electrode provided on the second inertial weight, at a position opposed to a second fixed electrode on the second fixed electrode semiconductor substrate;
• a first electrostatic attraction moving electrode formed on the first cantilever at a position opposed to a first electrostatic fixed attraction electrode formed on the first fixed electrode semiconductor substrate;
• and
• a second electrostatic attraction moving electrode formed on the second cantilever at a position opposed to a second electrostatic fixed attraction electrode formed on the second fixed electrode semiconductor substrate;
• wherein
• the electrostatic attraction electrodes are maintained at predetermined spacings from attraction forces caused by predetermined voltages applied therebetween, and the first and second moving electrodes are in contact with the first and second fixed electrodes when a first acceleration force and a second acceleration force acting on the acceleration sensor are each less than a predetermined magnitude.