Silicone polymer composition, method of forming a pattern and method of forming an insulating film

A silicon polymer composition comprising a polysilane having a repeating unit represented by the following general formula (1) and not having a polymerizable multi-bond, and a compound which is capable of generating a radial or an acid as it is irradiated by an actinic radiation ##STR57## wherein Ar is a substituted or non-substituted aryl group, wherein said compound which is capable of generating a radical or an acid is an organic halogen compound represented by the general formula (2) shown below:

• ##STR58## wherein Q is bromine atom or chlorine atom;
• P is CQ.sub.3, -NH2, -NHR.sup.2, -N(R.sup.2).sub.2, -OR.sup.2 or a substituted or non-substituted phenyl group, wherein Q is as above defined;
• R.sup.2 is a phenyl group, naphthyl group or lower alkyl group having not more than 6 carbon atoms;
• and R.sup.1 is -CQ.sub.3, -NH.sub.2, -NHR.sup.2, -N(R.sup.2).sub.2, -OR.sup.2, -(CH=CH).sub.n -W or a substituted or non-substituted phenyl group, wherein Q and R.sup.2 are as above defined, n is an integer of 1 to 3, W is an aromatic group, heterocyclic group or a group represented by the following general formula (3) ##STR59## wherein Z is an oxygen atom or a sulfur atom;
• and R.sup.3 is a lower alkyl group or phenyl group.

A silicon polymer composition comprising a polysilane having a repeating unit represented by the following general formula (1) and not having a polymerizable multi-bond, and a compound which is capable of generating a radial or an acid as it is irradiated by an actinic radiation ##STR60## wherein Ar is a substituted or non-substituted aryl group wherein said compound which is capable of generating a radical or an acid is mixed in said composition at a ratio of 0.01 to 3 wt. % based on said polysilane and is an organic halogen compound represented by the general formula (2) shown below:

• ##STR61## wherein Q is bromine atom or chlorine atom:
• P is CQ.sub.3, -NH.sub.2, -NHR.sup.2, -N(R.sup.2), -OR.sup.2 or a substituted or non-substituted phenyl group, wherein Q is as above defined, R.sup.2 is a phenyl group, naphthyl group or lower alkyl group having not more than 6 carbon atoms:
• and R.sup.1 is -CO.sub.3, -NH.sub.2, -NHR.sup.2, -N(R.sup.2).sub.2, -(CH=CH).sub.n -W or a substituted or non-substituted phenyl group, wherein Q and R.sup.2 are as above defined, n is an integer of 1 to 3, W is an aromatic group, heterocyclic group or a group represented by the following general formula (3) ##STR62## wherein Z is an oxygen atom or a sulfur atom;
• and R.sup.3 is a lower alkyl group or phenyl group.

A method of forming a pattern comprising the steps of:

• forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate;
• irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate;
• and
• removing said predetermined portion of the film irradiated by the actinic radiation by dissolving it with an aqueous alkaline developing solution ##STR63## wherein Ar is a substituted or non-substituted aryl group.

A method of forming a pattern comprising the steps of:

• forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate;
• irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate;
• heating the film of the organosilane compound after the irradiation of the actinic radiation;
• and
• removing a non-irradiated portion of the film by dissolving it with an organic solvent ##STR66## wherein Ar is a substituted or non-substituted aryl group.

A method of forming a pattern comprising the steps of:

• forming a film of an organosilane compound comprising a silicon polymer composition comprising a polysilane having a repeating unit represented by the following general formula (1) and a compound which is capable of generating a radical or an acid as it is irradiated by an actinic radiation ##STR69## wherein Ar is a substituted or non-substituted aryl group on a substrate;
• irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate;
• immersing the organosilane compound film irradiated in the preceding step in a solution containing a color component to coloring the organosilane compound film;
• and
• heat-drying the organosilane compound film colored in the preceding step to turn the film into a three-dimensional structure.

A method of forming a pattern comprising the steps of:

• forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (4) on a substrate;
• irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed;
• impregnating at least one kind of powders selected from SiO.sub.2 powder and SiN powder in said predetermined portion irradiated by the actinic radiation;
• and
• heat-drying the film of the organosilane compound after the aforementioned impregnating step thereby to turn the film into a three-dimensional structure ##STR72## wherein R.sup.4 is a substituted or non-substituted aryl group, or a substituted or non-substituted alkyl group.