Method for producing mixed metal oxide compounds
AssigneeSanyo Electric Co., Ltd.
InventorsMasaaki Nemoto, Shuichi Yoshikawa, Ryokan Yuasa, Isao Yoshida, Yorinobu Yoshisato
Life of this patent
Estimating the term…
Abstract
A precursor is made from a plurality of materials having different vapor pressures. The precursor and a source material are placed in a closed heat treatment furnace. The source material is materials which are the same as some of the materials contained in the precursor and having particular vapor pressures. The precursor and source material is thermally treated in the furnace while the source material is being supplied, so the particular materials in the precursor have their evaporation suppressed, thereby forming compounds. The compounds may be oxide superconductors, oxide dielectric, and so on.
Claims5
A method of producing a thallium oxide superconductor compound, comprising the steps of:
- (a) forming a precursor from a plurality of chemical elements including Tl, Ba, Ca, Cu and O;
- (b) placing the precursor in a chamber;
- (c) placing at least two source materials in the chamber, a first one of the source materials containing Tl.sub.2 O and a second one of the source materials containing Tl.sub.2 O.sub.3, the first and second source materials being in a liquid or solid state;
- (d) sealing the chamber in an airtight manner;
- and
- (e) thermally treating the precursor and the source materials by heating the first and second source materials and the precursor to independently controlled temperatures to evaporate thallium and oxygen from the first and second source materials in the sealed chamber and to suppress evaporation of thallium and oxygen from the precursor to form the superconductor compound having a predetermined composition ratio of oxygen.
A method of producing a BaKBiO superconductor compound, comprising the steps of:
- (a) forming a precursor from a plurality of chemical elements including Ba, K, Bi, and O;
- (b) placing the precursor in a chamber;
- (c) placing at least two source materials in the chamber, a first one of the source materials containing K.sub.2 O and a second one of the source materials containing K.sub.2 O.sub.2, the first and second source materials being in a liquid or solid state;
- (d) sealing the chamber in an airtight manner;
- and
- (e) thermally treating the precursor and the source materials by heating the first and second source materials and the precursor to independently controlled temperatures to evaporate potassium and oxygen from the first and second source materials in the sealed chamber and to suppress evaporation of potassium and oxygen from the precursor to form the superconductor compound having a predetermined composition ratio of oxygen.
A method of producing a PbZnNbO dielectric compound, comprising the steps of:
- (a) forming a precursor from a plurality of chemical elements including Pb, Zn, Nb, and O;
- (b) placing the precursor in a chamber;
- (c) placing at least two source materials in the chamber, a first one of the source materials containing Pb.sub.3 O.sub.4 and a second one of the source materials containing PbO.sub.2, the first and second source materials being in a liquid or solid state;
- (d) sealing the chamber in an airtight manner;
- and
- (e) thermally treating the precursor and the source materials by heating the first and second source materials and the precursor to independently controlled temperatures to evaporate lead and oxygen from the first and second source materials in the sealed chamber and to suppress evaporation of lead and oxygen from the precursor to form the dielectric compound having a predetermined composition ratio of oxygen.
A method of producing a tl-containing compound, comprising the steps of:
- (a) forming a precursor from a plurality of chemical elements having respectively different vapor pressures;
- (b) placing the precursor in a chamber;
- (c) placing at least two source materials in the chamber, a first one of the source materials consisting essentially of Tl.sub.2 O and a second one of the source materials consisting essentially of Tl.sub.2 O.sub.3, the first and second source materials being in a liquid or solid state, and each of the source materials containing at least one chemical element which is identical to a respective chemical element contained in the precursor;
- (d) sealing the chamber in an airtight manner;
- and
- (e) thermally treating the precursor and the source materials and evaporating chemical elements from the source materials in the chamber which has been sealed in order to suppress evaporation of chemical elements from the precursor and to form a compound having a predetermined composition ratio, wherein said step of thermally treating comprises heating the first and second source materials and the precursor to independently controlled temperatures.
Dependencies are inferred from the claim text.