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US 5,962,194 AGranted
Processing method and apparatus
AssigneeCanon Kabushiki Kaisha
InventorsToshiyuki Komatsu, Yasue Sato, Shin-Ichi Kawate
Life of this patent
Estimating the term…
Abstract
A processing method comprises: a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator; a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface; a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; and a fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.
Claims32
A processing method comprising:
- a first step of depositing on a substrate a first film to be etched;
- a second step of selectively irradiating a selected region of the deposited first film to be etched with light to modify a portion of the thickness of the first film to be etched to thereby form a first protective film, said first film thereby being comprised of the first protective film and a first unmodified portion;
- a third step of depositing on the first film a second film to be etched, said second film to be etched being thinner than the first film to be etched;
- a fourth step of selectively irradiating with light a region of the deposited second film to be etched corresponding to the selected region of the second step, to modify the second film to be etched to thereby form a second protective film, said second film thereby being comprised of the second protective layer and a second unmodified portion;
- and
- a fifth step of applying dry etchant to dry etch the second unmodified portion of the second film and the first unmodified portion of the first film employing the second and first protective films as etching masks;
- wherein the second and first protective films are also dry etched at a rate less than the etching rate of the unmodified portions, and wherein a portion of the first unmodified portion that is not dry etched is not removed later.
4 more elements
A processing method comprising the steps of:
- (a) depositing on a substrate a first film to be etched for forming a pattern;
- (b) selectively irradiating the first film to be etched with light in accordance with the pattern to modify a portion of the thickness of the first film in accordance with the pattern, thereby forming a first protective layer, said first film thereby being comprised of the first protective layer and a first unmodified portion;
- (c) depositing a second film on the first film;
- (d) selectively irradiating the deposited second film with light in accordance with the pattern to modify the thickness of the second film in accordance with the pattern thereby forming a second protective layer, said second film thereby being comprised of the second protective layer and a second unmodified portion, said first and second protective layers forming an etching mask;
- and
- (e) dry etching the first and second unmodified portions of the first and second films using the etching mask, wherein a portion of the first unmodified portion that is not dry etched is not removed later.
3 more elements
A processing method comprising:
- a first step of depositing on a substrate a first film to be etched;
- a second step of selectively irradiating a selected region of the deposited first film to be etched with light to modify a portion of the thickness of the first film to be etched to thereby form a first protective film, said first film thereby being comprised of the first protective film and a first unmodified portion;
- a third step of depositing on the first film a second film to be etched, said second film to be etched being thinner than the first film to be etched;
- a fourth step of selectively irradiating with light a region of the deposited second film to be etched corresponding to the selected region of the second step, to modify the second film to be etched to thereby form a second protective film, said second film thereby being comprised of the second protective layer and a second unmodified portion;
- and
- a fifth step of applying dry etchant to dry etch the second unmodified portion of the second film and the first unmodified portion of the first film employing the second and first protective films as etching masks;
- wherein the second and first protective films are also dry etched at a rate less than the etching rate of the unmodified portions and the dry etching is effected in an atmosphere including chlorine.
4 more elements
A processing method comprising:
- a first step of depositing on a substrate a first film to be etched;
- a second step of selectively irradiating a selected region of the deposited first film to be etched with light to modify a portion of the thickness of the first film to be etched to thereby form a first protective film, said first film thereby being comprised of the first protective film and a first unmodified portion, wherein the selective light irradiation is effected in an atmosphere including nitrogen or oxygen and NO.sub.2 ;
- a third step of depositing on the first film a second film to be etched, said second film to be etched being thinner than the first film to be etched;
- a fourth step of selectively irradiating with light a region of the deposited second film to be etched corresponding to the selected region of the second step, to modify the second film to be etched to thereby form a second protective film, said second film thereby being comprised of the second protective layer and a second unmodified portion, wherein the selective light irradiation is effected in an atmosphere including nitrogen or oxygen and NO.sub.2 ;
- and
- a fifth step of applying dry etchant to dry etch the second unmodified portion of the second film and the first unmodified portion of the first film employing the second and first protective films as etching masks;
- wherein the second and first protective films are also dry etched at a rate less than the etching rate of the unmodified portions.
4 more elements
A processing method comprising the steps of:
- (a) depositing on a substrate a first film to be etched for forming a pattern;
- (b) selectively irradiating the first film to be etched with light in accordance with the pattern to modify a portion of the thickness of the first film in accordance with the pattern, thereby forming a first protective layer, said first film thereby being comprised of the first protective layer and a first unmodified portion;
- (c) depositing a second film on the first film;
- (d) selectively irradiating the deposited second film with light in accordance with the pattern to modify the thickness of the second film in accordance with the pattern thereby forming a second protective layer, said second film thereby being comprised of the second protective layer and a second unmodified portion, said first and second protective layers forming an etching mask;
- and
- (e) dry etching the first and second unmodified portions of the first and second films using the etching mask;
- wherein steps (c) and (d) are repeated a plurality of times followed by dry etching each of said protective films and deposited films after all the layers are deposited.
4 more elements
A processing method comprising the steps of:
- (a) depositing on a substrate a first film to be etched for forming a pattern;
- (b) selectively irradiating the first film to be etched with light in accordance with the pattern to modify a portion of the thickness of the first film in accordance with the pattern, thereby forming a first protective layer, said first film thereby being comprised of the first protective layer and a first unmodified portion;
- (c) depositing a second film on the first film;
- (d) selectively irradiating the deposited second film with light in accordance with the pattern to modify the thickness of the second film in accordance with the pattern thereby forming a second protective layer, said second film thereby being comprised of the second protective layer and a second unmodified portion, said first and second protective layers forming an etching mask;
- and
- (e) dry etching the first and second unmodified portions of the first and second films using the etching mask, wherein the dry etching is effected in an atmosphere including chlorine.
3 more elements
A processing method comprising the steps of:
- (a) depositing on a substrate a first film to be etched for forming a pattern;
- (b) selectively irradiating the first film to be etched with light in accordance with the pattern to modify a portion of the thickness of the first film in accordance with the pattern, thereby forming a first protective layer, said first film thereby being comprised of the first protective layer and a first unmodified portion, and wherein the selective light irradiation is effected in an atmosphere including nitrogen or oxygen and NO.sub.2 ;
- (c) depositing a second film on the first film;
- (d) selectively irradiating the deposited second film with light in accordance with the pattern to modify the thickness of the second film in accordance with the pattern thereby forming a second protective layer, said second film thereby being comprised of the second protective layer and a second unmodified portion, said first and second protective layers forming an etching mask, and wherein the selective light irradiation is effected in an atmosphere including nitrogen or oxygen and NO.sub.2 ;
- and
- (e) dry etching the first and second unmodified portions of the first and second films using the etching mask.
3 more elements
A processing method comprising:
- a first step of depositing on a substrate a first film to be etched;
- a second step of selectively irradiating a selected region of the deposited first film to be etched with light to modify a portion of the thickness of the first film to be etched to thereby form a first protective film, said first film thereby being comprised of the first protective film and a first unmodified portion;
- a third step of depositing on the first film a second film to be etched, said second film to be etched being thinner than the first film to be etched;
- a fourth step of selectively irradiating with light a region of the deposited second film to be etched corresponding to the selected region of the second step, to modify the second film to be etched to thereby form a second protective film, said second film thereby being comprised of the second protective layer and a second unmodified portion;
- and
- a fifth step of applying dry etchant to dry etch the second unmodified portion of the second film and the first unmodified portion of the first film employing the second and first protective films as etching masks;
- wherein the second and first protective films are also dry etched at a rate less than the etching rate of the unmodified portions;
- wherein the third and fourth steps are repeated a plurality of times, thereby forming a plurality of films, each of said plurality of films being comprised of a protective layer and an unmodified portion, followed by the step of dry etching the plurality of films according to the fifth step.
5 more elements
Dependencies are inferred from the claim text.