Pane of transparent material having a low emissivity
AssigneeBalzers und Leybold Deutschland Holding AG
InventorsAnton Zmelty, Joachim Szczyrbowski, Christoph Braatz
Life of this patent
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Abstract
A system of layers applied to a transparent substrate includes a first layer of an oxide such as ZnO or SnO.sub.2, a second layer of a substoichiometric oxide of Zn or Ta, a third layer of Ag or Cu, a fourth layer of a substoichiometric oxide of Ti, Cr, or Nb, and a fifth layer of similar composition as the first layer. The layers are preferably deposited by magnetron cathode sputtering in an atmosphere which consists of inert gas and, in the case of the oxide layers, a reactive gas.
Claims10
Pane of transparent material with a substrate and a layer system provided on one side of the substrate, wherein said layer system comprises
- (a) a first layer selected from at least one of ZnO, SnO.sub.2, In.sub.2 O.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2, ZrO.sub.2, Ta.sub.2 O.sub.5, SiO.sub.2, Al.sub.2 O.sub.3, or selected from one at least one of AlN or Si.sub.3 N, or selected from at least one of the oxynitrides of aluminum, titanium, zirconium, and silicon, is deposited in a thickness of 20-70 nm on the substrate;
- (b) a second layer comprises at least one oxide selected from the group consisting of Ta.sub.2 O.sub.x and a mixture comprising ZnO.sub.x and TaO.sub.x in a thickness of 1 to 9 nm in the first layer wherein X is a number that results in a substoichiometric ratio of oxygen to either Zn or Ta;
- (c) a third layer selected from at least one of Ag and Cu is applied in a thickness of 5-30 nm on the second layer;
- (d) a fourth layer of at least one of the metals Ti, Cr, and Nb, or an alloy with at least 15 atom % of one of Ti, Cr, and Nb is deposited on said third layer as one of a metal layer or a substoichiometric metal oxide layer in a thickness of 0.5-5 nm, and
- (e) a fifth layer selected from at least one of ZnO, SnO.sub.2, In.sub.3 O.sub.3, Bi.sub.2 O.sub.3, TiO.sub.2, ZrO.sub.2, Ta.sub.2 O.sub.5, SiO.sub.2, Al.sub.2 O.sub.3, or selected from one at least one of AlN or Si.sub.3 N, or selected from at least one of the oxynitrides of aluminum, titanium, zirconium, and silicon is deposited in a thickness of 20-70 nm on the substrate is deposited on said fourth layer.
Dependencies are inferred from the claim text.