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AssigneesSymetrix Corporation, Matsushita Electronics Corporation
InventorsShinichiro Hayashi, Larry D. McMillan, Masamichi Azuma, Carlos A. Paz de Araujo
Estimating the term…
A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
Apparatus for fabricating an integrated circuit, said apparatus comprising:
Apparatus for fabricating an integrated circuit, said apparatus comprising:
A method of fabricating an integrated circuit, said method comprising the steps of:
Apparatus for fabricating an integrated circuit, said apparatus comprising:
A method of fabricating an integrated circuit, said method comprising the steps of:
Dependencies are inferred from the claim text.