Plasma processing apparatus and plasma processing method using the same

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• a plasma generating space chamber portion coupled with said waveguide portion;
• first static magnetic field generating means consisting of permanent magnets surrounding said waveguide portion, which have an electron cyclotron resonance magnetic field strength at least at a part of said waveguide portion and said plasma generating space chamber portion and forming a cussed magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• second static magnetic field generating means consisting of permanent magnets arranged around said plasma generating space chamber portion, every adjacent two of which have polarities opposite to each other;
• means for holding matter to be processed facing said plasma generating space chamber portion;
• means for applying an AC bias voltage to said matter to be processed;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• means for applying an AC bias voltage to said counterplate;
• and
• means for controlling a phase of said AC bias voltage applied to said matter to be processed and a phase of said AC bias voltage applied to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• an electron heating space chamber portion formed on a downstream side with respect to a dielectric body disposed within said waveguide portion;
• a plasma generating space chamber portion coupled with said electron heating space chamber portion;
• first static magnetic field generating means consisting of permanent magnets surrounding said electron heating space chamber portion, which produce a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength at a microwave leading-out portion of said electron heating space chamber portion and which form a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• second static magnetic field generating means consisting of permanent magnets arranged around said plasma generating space chamber portion, every adjacent two of which have polarities opposite to each other;
• means for holding matter to be processed facing said plasma generating space chamber portion;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• and
• means for applying a bias voltage to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• an electron heating space chamber portion formed on a downstream side with respect to a dielectric body disposed within said waveguide portion;
• a plasma generating space chamber portion coupled with said electron heating space chamber portion;
• first static magnetic field generating means consisting of permanent magnets surrounding said electron heating space chamber portion, which produce a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength at a microwave leading-out portion of said electron heating space chamber portion and which form a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• second static magnetic field generating means consisting of permanent magnets arranged around said plasma generating space chamber portion, every adjacent two of which have polarities opposite to each other;
• means for holding matter to be processed facing said plasma generating space chamber portion;
• means for applying an AC bias voltage to said matter to be processed;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• means for applying an AC bias voltage to said counterplate;
• and
• means for controlling a phase of said AC bias voltage applied to said matter to be processed and a phase of said AC bias voltage applied to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• a plasma generating space chamber portion coupled with said waveguide portion;
• a first plurality of permanent magnets surrounding said waveguide portion, which have an electron cyclotron resonance magnetic field strength at least at a part of said waveguide portion and said plasma generating space chamber portion and forming a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• a second plurality of permanent magnets arranged around said plasma generating space chamber portion, adjacent ones of which have polarities opposite to each other;
• a support onto which matter to be processed is placed so as to be facing said plasma generating space chamber portion;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• and
• means for applying a bias voltage to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• a plasma generating space chamber portion coupled with said waveguide portion;
• a first plurality of permanent magnets surrounding said waveguide portion, which have an electron cyclotron resonance magnetic field strength at least at a part of said waveguide portion and said plasma generating space chamber portion and forming a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• a second plurality of permanent magnets arranged around said plasma generating space chamber portion, adjacent ones of which have polarities opposite to each other;
• a support onto which matter to be processed is placed so as to be facing said plasma generating space chamber portion;
• means for applying an AC bias voltage to said matter to be processed;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• means for applying an AC bias voltage to said counterplate;
• and
• means for controlling a phase of said AC bias voltage applied to said matter to be processed and a phase of said AC bias voltage applied to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• an electron heating space chamber portion formed on a downstream side with respect to a dielectric body disposed within said waveguide portion;
• a plasma generating space chamber portion coupled with said electron heating space chamber portion;
• a first plurality of permanent magnets surrounding said electron heating space chamber portion, which produce a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength at a microwave leading-out portion of said electron heating space chamber portion and which form a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• a second plurality of permanent magnets arranged around said plasma generating space chamber portion, adjacent ones of which have polarities opposite to each other;
• a support onto which matter to be processed is placed so as to be facing said plasma generating space chamber portion;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• and
• means for applying a bias voltage to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• an electron heating space chamber portion formed on a downstream side with respect to a dielectric body disposed within said waveguide portion;
• a plasma generating space chamber portion coupled with said electron heating space chamber portion;
• a first plurality of permanent magnets surrounding said electron heating space chamber portion, which produce a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength at a microwave leading-out portion of said electron heating space chamber portion and which form a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• a second plurality of permanent magnets arranged around said plasma generating space chamber portion, adjacent ones of which have polarities opposite to each other;
• means for holding matter to be processed facing said plasma generating space chamber portion;
• means for applying an AC bias voltage to said matter to be processed;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• means for applying an AC bias voltage to said counterplate;
• and
• means for controlling a phase of said AC bias voltage applied to said matter to be processed and a phase of said AC bias voltage applied to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• a plasma generating space chamber portion coupled with said waveguide portion;
• first static magnetic field generating means having permanent magnets surrounding said waveguide portion, and having an electron cyclotron resonance magnetic field strength at least at a part of said waveguide portion and said plasma generating space chamber portion and forming a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• second static magnetic field generating means having permanent magnets arranged around said plasma generating space chamber portion, adjacent ones of which have polarities opposite to each other;
• means for holding matter to be processed facing said plasma generating space chamber portion;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• and
• means for applying a bias voltage to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• a plasma generating space chamber portion coupled with said waveguide portion;
• first static magnetic field generating means having permanent magnets surrounding said waveguide portion, and having an electron cyclotron resonance magnetic field strength at least at a part of said waveguide portion and said plasma generating space chamber portion and forming a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• second static magnetic field generating means having permanent magnets arranged around said plasma generating space chamber portion, adjacent ones of which have polarities opposite to each other;
• means for holding matter to be processed facing said plasma generating space chamber portion;
• means for applying an AC bias voltage to said matter to be processed;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• means for applying an AC bias voltage to said counterplate;
• and
• means for controlling a phase of said AC bias voltage applied to said matter to be processed and a phase of said AC bias voltage applied to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• an electron heating space chamber portion formed on a downstream side with respect to a dielectric body disposed within said waveguide portion;
• a plasma generating space chamber portion coupled with said electron heating space chamber portion;
• first static magnetic field generating means having permanent magnets surrounding said electron heating space chamber portion, for producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength at a microwave leading-out portion of said electron heating space chamber portion and which form a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• second static magnetic field generating means having permanent magnets arranged around said plasma generating space chamber portion, adjacent ones of which have polarities opposite to each other;
• means for holding matter to be processed facing said plasma generating space chamber portion;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• and
• means for applying a bias voltage to said counterplate.

A plasma processing apparatus comprising:

• at least one waveguide portion for introducing microwaves;
• an electron heating space chamber portion formed on a downstream side with respect to a dielectric body disposed within said waveguide portion;
• a plasma generating space chamber portion coupled with said electron heating space chamber portion;
• first static magnetic field generating means having permanent magnets surrounding said electron heating space chamber portion, for producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength at a microwave leading-out portion of said electron heating space chamber portion and which form a cusped magnetic field, a direction of which is reversed along a transmission direction of microwaves in said waveguide portion;
• second static magnetic field generating means having permanent magnets arranged around said plasma generating space chamber portion, adjacent ones of which have polarities opposite to each other;
• means for holding matter to be processed facing said plasma generating space chamber portion;
• means for applying an AC bias voltage to said matter to be processed;
• a counterplate facing said plasma generating space chamber portion, opposite to said matter to be processed;
• means for applying an AC bias voltage to said counterplate;
• and
• means for controlling a phase of said AC bias voltage applied to said matter to be processed and a phase of said AC bias voltage applied to said counterplate.