Thin-film photoelectric conversion device and a method of manufacturing the same

A method of manufacturing a semiconductor device comprising:

• providing a substantially intrinsic semiconductor film on an insulating surface, said semiconductor film including at least a part having a catalyst containing material, said semiconductor film comprising silicon doped with boron at a concentration of 0.001-0.1 atm %;
• crystallizing said semiconductor film wherein said catalyst diffuses through the semiconductor film and functions to promote crystallization thereof;
• introducing phosphorous into at least a portion of said semiconductor film after the crystallization;
• and
• thermally annealing said semiconductor film to activate said phosphorous in order to getter the catalyst contained in said semiconductor film.

A method of manufacturing a semiconductor device comprising:

• providing a semiconductor film on an insulating surface, said semiconductor film including at least a part having a catalyst containing material;
• diffusing said catalyst metal through the semiconductor film and crystallizing said semiconductor film using the diffused catalyst to promote crystallization of said semiconductor film;
• introducing phosphorous into a portion of said semiconductor film after the crystallization;
• and
• thermally annealing said semiconductor film in a nitrogen atmosphere to activate said phosphorous in order to getter the catalyst contained in said semiconductor film.

A method of manufacturing a semiconductor device having a junction between at least two different type semiconductor materials, said method comprising:

• providing a semiconductor film comprising amorphous silicon formed on an insulating surface, said semiconductor film including at least a part having a catalyst containing material;
• crystallizing said semiconductor film by heating in a way such that said catalyst diffuses through the semiconductor film and functions to promote crystallization of said semiconductor film;
• introducing ions of a gettering material into a portion of said semiconductor film after the crystallization;
• and
• thermally annealing said semiconductor film at a temperature not lower than 500.degree. C. to activate said gettering material in order to getter the catalyst material contained in said semiconductor film,
• wherein said semiconductor film constitutes said junction between said different type semiconductor materials.

A method of manufacturing a semiconductor device having a junction between at least two different type semiconductor materials, said method comprising:

• providing a substantially intrinsic semiconductor film on an insulating surface, said semiconductor film including at least a part having a catalyst containing material, said semiconductor film comprising amorphous silicon doped with boron at a concentration of 0.001-0.1 atm %;
• crystallizing said semiconductor film by heating in a way such that said catalyst diffuses through the semiconductor film and functions to promote crystallization of said semiconductor film;
• introducing ions of a gettering material into a portion of said semiconductor film after the crystallization;
• and
• thermally annealing said semiconductor film to activate said gettering material in order to getter the catalyst containing material in said semiconductor film,
• wherein said semiconductor film constitutes said junction of said different type semiconductor materials.

A method of manufacturing a semiconductor device having a junction between at least two different type semiconductor materials, said method comprising:

• providing a semiconductor film comprising amorphous silicon on an insulating surface, said semiconductor film including at least a part having a catalyst containing material;
• crystallizing said semiconductor film by heating in a way such that said catalyst diffuses through the semiconductor film and functions to promote crystallization of said semiconductor film;
• introducing ions of a gettering material into a portion of said semiconductor film after the crystallization;
• and
• thermally annealing said semiconductor film in a nitrogen atmosphere to activate said gettering material in order to getter the catalyst in said semiconductor film,
• wherein said semiconductor film constitutes said junction comprising said different type semiconductor materials.

A method of manufacturing a semiconductor device comprising:

• providing a semiconductor film on an insulating surface, said semiconductor film including at least a part having a catalyst containing material;
• crystallizing said semiconductor film in a way such that said catalyst diffuses through the semiconductor film and functions to promote crystallization of said semiconductor film;
• introducing phosphorous into at least a portion of said semiconductor film after the crystallization;
• and
• thermally annealing said semiconductor film at a temperature not lower than 500.degree. C. to activate said phosphorus in order to react with the catalyst in said semiconductor film.

A method of manufacturing a semiconductor device comprising:

• providing a semiconductor film on an insulating surface, said semiconductor film including at least an amorphous material, and at least a part of said semiconductor film having a catalyst containing material;
• crystallizing said semiconductor film using said catalyst to diffuse through the semiconductor film and to promote crystallization of said semiconductor film;
• introducing a gettering material into at least a portion of said semiconductor film after the crystallization;
• and
• thermally annealing said semiconductor film at a temperature not lower than 500.degree. C. to activate said gettering material in order to react with the catalyst in said semiconductor film in a way that reduces a chemical feature of said catalyst metal in said semiconductor film.