Conical baffle for semiconductor furnaces
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Lang Wang, Yu-Jen Yu
Life of this patent
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Abstract
An apparatus for producing thin film coatings and/or dopant levels on semiconductor wafers or other substrates with improved film growth uniformity (of thickness and composition) and/or dopant uniformity is provided. The apparatus is positioned in a furnace tube between the wafers and a gas inlet. The apparatus comprises a conical shaped baffle.
Claims12
An apparatus for producing thin film coatings and/or dopant levels on or in semiconductor wafers or other substrates with improved film growth uniformity of thickness and composition, and/or dopant uniformity;
- the apparatus positioned in a furnace tube between the wafers and a gas inlet, the apparatus comprising a conical shaped baffle;
- said conical shaped baffle having an annular open front end and a closed back tip.
An apparatus for producing thin film coatings and/or dopant levels on or in semiconductor wafers or other substrates with improved film growth uniformity of thickness and composition, and/or dopant uniformity;
- the apparatus positioned in a furnace tube between the wafers and a gas inlet, the apparatus comprising a conical shaped baffle;
- said baffle has a diameter in the range of about 154 to 166 mm. and a length in the range of about 89 to 99 mm.
An apparatus for producing thin film coatings and/or dopant levels on or in semiconductor wafers or other substrates with improved film growth uniformity of thickness and composition, and/or dopant uniformity;
- the apparatus positioned in a furnace tube between the wafers and a gas inlet, the apparatus comprising a conical shaped baffle;
- said baffle has a diameter in the range of 204 to 216 mm. and a length in the range of about 89 to 99 mm.
Dependencies are inferred from the claim text.