Method for manufacturing electrode plate for plasma processing device
AssigneesTokyo Electron Limited, Tokai Carbon Co., Ltd.
InventorsShosuke Endoh, Masaaki Mitsuno
Life of this patent
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Abstract
A method manufactures an electrode plate for a plasma processing device in which a semiconductor wafer is processed to form a highly integrated circuit. The method includes a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material one or two backing steps of carbonizing the heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon and a polishing step of polishing one face of the baking material, which is exposed to plasma, to a depth of 20 .mu.m to 1.25 mm.
Claims6
A method for manufacturing an electrode plate for a plasma processing device, comprising:
- a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material;
- a baking step of carbonizing said heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon;
- and
- a polishing step of polishing at least one face of said baking material, which is exposed to plasma, to a depth of at least 20 .mu.m.
A method for manufacturing an electrode plate for a plasma processing device, comprising:
- a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material;
- a step of polishing at least one face of said resin forming material, which is exposed to plasma, to a depth of at least 25 .mu.m;
- and
- a baking step of carbonizing said polished resin forming material by heating under a non-oxidizing atmosphere to prepare a baking material composed of glass-like carbon.
A method for manufacturing an electrode plate for a plasma processing device, comprising:
- a curing step of heat-curing a liquid thermosetting resin to prepare a resin forming material;
- a primary baking step of carbonizing said heat-cured resin forming material by heating under a non-oxidizing atmosphere to prepare a primary baking material composed of glass-like carbon;
- and
- a secondary baking step of heating said primary baking material under a non-oxidizing atmosphere at a temperature higher than in the primary baking step to prepare a secondary baking material;
- and
- a polishing step of polishing at least one face of said resin forming material, said primary baking material, and/or said secondary baking material, the face being exposed to plasma, to remove curing uneven portions formed on said one face in said curing step.
Dependencies are inferred from the claim text.