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AssigneeHitachi Chemical Company, Ltd.
InventorsHidekazu Matsuura, Yoshihide Iwazaki
Estimating the term…
A method of forming a resin film pattern, comprising the steps of (A) producing a resin film layer soluble in an organic solvent, on a substrate such as silicon wafer, even engineering plastics being usable as a resin of the resin film layer; (B) forming a resist image of desired pattern on the organic solvent-soluble resin film layer; (C) etching each of those parts of the organic solvent-soluble resin film layer which are not covered with the resist image, using the organic solvent; and (D) removing the resist image from the resulting, organic solvent-soluble resin film layer using a resist image remover which contains 0.01-10.0 parts-by-weight of arylsulfonic acid with respect to 100 parts-by-weight of solvent having a solubility parameter of 5.0-11.0. The step (D) may well be followed by the step (E) of processing the substrate which includes the resin film layer, with alcohol.
A method of forming a film layer consisting essentially of a polyimide of desired pattern on a semiconductor substrate, comprising the steps of:
A fabrication process of a semiconductor chip including a film layer consisting essentially of a polyimide, comprising the steps of:
A fabrication process of a semiconductor package, comprising the steps of:
Dependencies are inferred from the claim text.