Mask used in charged particle beam projecting apparatus and method for dividing pattern
AssigneeNikon Corporation
InventorMamoru Nakasuji
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Abstract
A method for dividing a pattern according to the present invention is used in a charged particle beam projecting apparatus, in which: a plurality of block patterns into which a projected pattern to be projected on a substrate is divided are respectively formed in a plurality of regions of a mask; the plurality of regions of the mask are successively irradiated with a charged particle beam so that the block patterns are successively projected on the substrate; and as a result the projected pattern is formed on the substrate. The method includes a step of dividing the projected pattern into the block patterns by parting lines which are plotted in accordance with profiles of pattern elements that constitute the projected pattern when the block patterns are determined.
Claims17
A method for dividing a pattern to be projected by a charged particle beam projecting apparatus onto a portion of a substrate corresponding to a single chip, said pattern including a plurality of pattern elements corresponding to features of said single chip, said pattern being divided into a plurality of blocks, each of said blocks including at least a portion of two or more of said plurality of pattern elements, said plurality of blocks being respectively formed in a plurality of regions of a mask, said method comprising:
- dividing said pattern to be projected into said plurality of blocks by parting lines, at least one of said parting lines including segments which are connected end-to-end to each other so as to be non-linear.
A method for dividing a pattern to be projected by a charged particle beam projecting apparatus onto a portion of a substrate corresponding to a single chip, said pattern including a plurality of pattern elements corresponding to features of said single chip, said pattern being divided into a plurality of blocks, each of said blocks including at least a portion of two or more of said plurality of pattern elements, said plurality of blocks being respectively formed in a plurality of regions of a mask, said method comprising:
- dividing said pattern to be projected into said plurality of blocks by parting lines arranged so that at least one of said parting lines passes through singular points on profile lines of said pattern elements corresponding to said features of said single chip.
A method for dividing a pattern to be projected by a charged particle beam projecting apparatus onto a portion of a substrate corresponding to a single chip, said pattern to be projected including a plurality of pattern elements corresponding to features of said single chip, said pattern being divided into a plurality of blocks, each of said blocks including at least a portion of two or more of said plurality of pattern elements, said plurality of blocks being respectively formed in a plurality of regions of a mask, said method comprising:
- defining zones within said pattern to be projected where parting lines can be set in areas where said pattern elements corresponding to said features of said single chip do not exist on said pattern to be projected;
- arranging parting lines within said zones;
- defining said plurality of blocks by said parting lines;
- and
- forming said plurality of blocks in said respective regions of said mask in such a manner that portions of said areas where said pattern elements corresponding to said features of said single chip do not exist are not formed in said regions of the mask to minimize the size of said regions of the mask.
A method for dividing a pattern to be projected by a charged particle beam projecting apparatus onto a portion of a substrate corresponding to a single chip, said pattern including a plurality of pattern elements corresponding to features of said single chip, said pattern being divided into a plurality of blocks, each of said blocks including at least a portion of two or more of said plurality of pattern elements, said plurality of blocks being respectively formed in a plurality of regions of a mask, said method comprising:
- dividing said pattern to be projected into said plurality of blocks defined by parting lines arranged on said pattern so as to traverse said pattern in at least either of two directions oriented transversely to one another and to avoid intersecting said pattern elements with parting lines traversing said pattern in at least one of said two directions to thereby minimize connecting errors in projected pattern elements corresponding to said features of said single chip.
Dependencies are inferred from the claim text.