Magnetoresistive read transducer
AssigneeNEC Corporation
InventorsMikiko Saito, Hiroyuki Sato
Life of this patent
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Abstract
For providing a magnetoresistive read transducer capable of increasing the output by the increase of current, reduced with noises and having a durability, a magnetoresistive read transducer comprising a substrate and laminated thereon, a lower shield, a first gap layer, a thin film magnetoresistive element portion, a longitudinal bias layer, an electrode portion and an upper shield, each in a predetermined pattern successively, in which the entire resistance value of the electric conduction including the contact resistance of the electrode portion 7 is set within 1.2 times of a theoretical resistance value calculated based on the specific resistivity of the layer, in which a polysilicon layer is laminated between the magneto resistive film and the longitudinal bias layer.
Claims17
A magnetoresistive read transducer comprising:
- a substrate,
- an insulating layer formed on the substrate,
- a lower shield formed on the insulating layer,
- a first gap layer formed on the lower shield,
- a thin film magnetoresistive element formed in a predetermined pattern on the first gap layer,
- a longitudinal bias layer formed on portions of the magnetoresistive effect element other than a central active portion and on the first gap layer,
- first and second electrodes formed on the longitudinal bias layer for applying a conduction current from the outside,
- a second gap layer formed on the electrodes and magnetoresistive effect element portion, and
- an upper shield formed on the second gap layer wherein
- the total resistance value upon electric conduction including the contact resistance between each of the layers is within 1.2 times of a theoretical value calculated based on the shape of the magnetoresistive element portion and the specific resistivity of the material.
A magnetoresistive read transducer comprising:
- a substrate,
- an insulating layer formed on the substrate,
- a lower shield formed on the insulating layer,
- a first gap layer formed on the lower shield,
- a thin film magnetoresistive element formed in a predetermined pattern on the first gap layer,
- a longitudinal bias layer formed on portions the magnetoresistive effect element other than a central active portion and on the first gap layer,
- first and second electrodes formed on the longitudinal bias layer for applying a conduction current from the outside,
- a second gas layer formed on the electrodes and magnetoresistive effect element portion, and
- an upper shield formed on the second gap layer and, further,
- a polysilicon layer laminated between the magnetoresistive element portion and the longitudinal bias portion, wherein
- the magnetoresistive element portion and the longitudinal bias layer are made eutectic respectively at a junction portion with the polysilicon layer.
A magnetoresistive read transducer comprising:
- a substrate,
- an insulating layer formed on the substrate,
- a lower shield formed on the insulating layer,
- a first gap layer formed on the lower shield,
- a thin film magnetoresistive element formed in a predetermined pattern on the first gap layer,
- a longitudinal bias layer formed on portions of the magnetoresistive effect element other than a central active portion and on the first gap layer,
- first and second electrodes formed on the longitudinal bias layer for applying a conduction current from the outside,
- a second gap layer formed on the electrodes and magnetoresistive effect element portion, and
- an upper shield formed on the second gap layer,
- wherein
- the magnetoresistive element portion and the longitudinal bias layer are made eutectic respectively at a junction portion with the polysilicon layer.
A magnetoresistive read transducer comprising:
- a substrate,
- an insulating layer formed on the substrate,
- a lower shield formed on the insulating layer,
- a first gap layer formed on the lower shield,
- a thin film magnetoresistive element formed in a predetermined pattern on the first gap layer,
- a longitudinal bias layer formed on portions of the magnetoresistive effect element other than a central active portion and on the first gap layer,
- first and second electrodes formed on the longitudinal bias layer for applying a conduction current from the outside,
- a second gap layer formed on the electrodes and magnetoresistive effect element portion, and
- an upper shield formed on the second gap layer and, further,
- a layer having good heat conductivity disposed above the lower shield layer.
Dependencies are inferred from the claim text.