Layered structure with a silicide layer and process for producing such a layered structure
AssigneeForschungszentrum Julich GmbH
InventorSiegfried Mantl
Life of this patent
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Abstract
A process for producing a layered structure in which a silicide layer on a silicon substrate is subjected to local oxidation to cause the boundary layer side of the silicide layer to grow into the silicon substrate.
Claims5
A process for producing a layered structure with a silicide layer comprising applying a silicide layer on a surface of a silicon-based substrate, applying a mask to the silicide layer, and locally oxidizing the silicide layer through the mask on a boundary surface thereof which is opposite to a boundary surface bonded to the surface of the silicon-based substrate to form a silicon oxide layer, for a time sufficient to separate a region of local oxidation of the silicide layer from a neighboring region of the silicide layer.
Dependencies are inferred from the claim text.