Oriented polycrystalline thin films of transition metal chalcogenides

Abstract

A method of preparing a polycrystalline thin film of a transition metal chalcogenide of an orientation on a substrate which includes (a) depositing a layer of a transition metal material or mixtures thereof on the substrate; and (b) heating the layer in an open system in a gaseous reducing atmosphere containing one or more chalcogen materials for a time sufficient to allow the transition metal material and the chalcogen material to react and form the oriented polycrystalline thin film, the thin film being substantially exclusively oriented in the orientation. Also provided is a method of synthesizing structures of a transition metal chalcogenide selected from the group consisting of single layer or nested or stuffed inorganic fullerenes and nanotubes, including the step of reacting a transition metal compound with a volatile chalcogen compound in a reducing atmosphere at a temperature between about 750.degree. C. and about 1000.degree. C.

Dependencies are inferred from the claim text.