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US 5,958,155 AGranted
Process for producing thin film
AssigneeOlympus Optical Co., Ltd.
InventorsKen Kawamata, Nobuaki Mitamura
Life of this patent
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AssigneeOlympus Optical Co., Ltd.
InventorsKen Kawamata, Nobuaki Mitamura
Estimating the term…
A substrate (2) is rotatably installed in a vacuum chamber (1) at an upper part thereof MgF.sub.2 granules (3) as a film source material are placed in a quartz boat (4) and mounted on a magnetron cathode (5). The magnetron cathode (5) is connected through a matching box (6) to a 13.56 MHz radio frequency power source (7). Cooling water (8) for holding the temperature of the magnetron cathode (5) constant flows against a lower face of the magnetron cathode (5). A side wall of the vacuum chamber (1) is provided with gas introduction ports (9), (10) for introducing gas in the vacuum chamber (1). A shutter (11) is placed between the magnetron cathode (5) and the substrate (2). This structure provides a process enabling forming a thin film at a high speed by sputtering, especially a high speed sputtering process enabling forming a thin fluoride film free of light absorption.
A process for producing a thin film which comprises providing MgF.sub.2 as a film source material, generating plasma over the MgF.sub.2 by alternating current power in an atmosphere while introducing thereinto at least one gas selected from the group consisting of oxygen and nitrogen so that the MgF.sub.2 has its surface heated at a constant temperature ranging from 650 to 1100.degree. C. by the plasma, causing positive ions to sputter the MgF.sub.2 so that at least a part of the MgF.sub.2 is ejected in molecular form and depositing the MgF.sub.2 in molecular form on a substrate to thereby form a thin film on the substrate.
Dependencies are inferred from the claim text.