Method for cleaning workpiece surfaces and monitoring probes during workpiece processing
AssigneeSpeedFam-IPEC Corporation
InventorsPaul Holzapfel, Andrew Yednak, III, John Natalicio, Chad Goudie
Life of this patent
Estimating the term…
Loading patent…
AssigneeSpeedFam-IPEC Corporation
InventorsPaul Holzapfel, Andrew Yednak, III, John Natalicio, Chad Goudie
Estimating the term…
The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a workpiece, e.g., a semiconductor wafer. A probe is disposed proximate the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A reflected signal received by the probe is analyzed to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer. In accordance with another aspect of the present invention, a nozzle assembly having a plurality of fluid outlets may be provided to apply a stream of deionized water at the surface under inspection to thereby remove excess slurry and debris from the local region of the workpiece being inspected. A second fluid nozzle may be provided to apply a stream of deionized water to the tip of the probe tip to thereby clean the probe tip between endpoint detection cycles. The nozzle assembly may also include a third fluid nozzle for applying a stream of nitrogen gas to thereby deflect debris away from the probe tip during the endpoint detection procedure and a fourth fluid nozzle for applying a stream of nitrogen gas to thereby remove water and debris from the probe tip during the endpoint detection procedure.
A method for cleaning a surface of a workpiece and an interrogation probe associated with a workpiece monitoring system, said interrogation probe having a probe tip through which an interrogation signal is transmitted, said probe tip being located proximate a nozzle assembly, wherein said method comprises the steps of:
A method for cleaning a surface of a workpiece and an interrogation probe associated with an in-situ workpiece monitoring system, said interrogation probe having a probe tip through which an interrogation signal is transmitted, said probe tip being located proximate a nozzle assembly, wherein said method comprises the steps of:
A method for cleaning a surface of a workpiece and an interrogation probe associated with a workpiece monitoring system, said interrogation probe having a probe tip through which an interrogation signal is transmitted, said probe tip being located proximate a nozzle assembly comprising a plurality of block assemblies, wherein said method comprises the steps of:
Dependencies are inferred from the claim text.