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US 5,958,139 AGranted
Plasma etch system
AssigneeTegal Corporation
InventorsVladimir E. Leibovich, Martin L. Zucker
Life of this patent
Estimating the term…
Abstract
This invention relates to a plasma reactor apparatus having improved etch uniformity and throughput. Higher etch uniformity is achieved through the use of a new gas delivery mechanism and a thermally insulated wafer chuck. The vacuum insulated chuck also results in lower energy consumption and higher throughput.
Claims7
A plasma reactor comprising:
- a plasma reaction chamber;
- a chuck with a frontside and a backside, which frontside of said chuck is adapted to support a wafer to be processed;
- means adapted for heating said chuck;
- means adapted for generating a vacuum environment around said chuck separate from said chamber in order to thermally insulate said chuck;
- which generating means includes a backside chamber which is co-extensive with the backside of the chuck, said vacuum generating means including a vacuum generator for evacuating said backside chamber.
2 more elements
A plasma reactor comprising:
- a plasma reaction chamber;
- a chuck with a frontside adapted to support a wafer to be processed;
- said chuck having a backside;
- a heater that heats said chuck;
- and
- an enclosure, separate from said chamber, for creating a vacuum environment adjacent to said chuck in order to thermally insulate said chuck, wherein said enclosure is co-extensive with the backside of the chuck;
- and
- a vacuum generator connected to said enclosure, said vacuum generator for evacuating said enclosure.
5 more elements
A reactor comprising:
- a reaction chamber;
- a chuck with a frontside that is adapted to position a wafer to be processed;
- said chuck having a backside;
- an enclosure located adjacent to said chuck, said enclosure constructed in order to hold a vacuum adjacent to said chuck in order to thermally insulate said chuck;
- and
- said enclosure being co-extensive with the backside of the chuck;
- and
- a vacuum generator connected to said enclosure, said vacuum generator for evacuating said enclosure.
5 more elements
A reactor comprising:
- a reactor chamber;
- a device with a frontside that is adapted to position a wafer to be processed;
- said device having a backside;
- a backside chamber located adjacent to said backside of said device;
- and
- said backside chamber capable of holding a vacuum in order to thermally insulate said device, which said backside chamber is co-extensive with said backside of said device;
- and
- a vacuum generator connected to said backside chamber, said vacuum generator for evacuating said backside chamber.
5 more elements
A reactor comprising:
- a reactor chamber;
- a device adapted to position a wafer to be processed;
- said device having a backside;
- a backside chamber located adjacent to said backside of said device;
- said backside chamber capable of holding a vacuum in order to thermally insulate said device;
- a vacuum generator connected to said backside chamber, said vacuum generator for evacuating said backside chamber;
- wherein said device is a chuck;
- and
- wherein said chuck including a chuck heater.
6 more elements
Dependencies are inferred from the claim text.