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AssigneeMicron Technology, Inc.
InventorThad Lee Brunelli
Estimating the term…
A method and apparatus for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.
A method of conditioning a polishing pad upon which waste matter accumulates during planarization of a substrate, the method comprising:
A method of conditioning a planarizing surface of a polishing pad used in planarization of a semiconductor substrate, the substrate comprising doped glass, the polishing pad having a glass transition temperature of approximately 311.degree. K., the method comprising:
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising controlling a temperature of the planarizing surface to be within the range of about 308.degree. K. to about 319.degree. K. while removing material from the planarizing surface of the polishing pad without previously immersing the polishing pad to absorb a liquid.
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising:
An apparatus for planarizing a substrate, comprising:
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising controlling a temperature of the planarizing surface to be within the range of about 305.degree. K. to about 319.degree. K. by electrically heating a support surface supporting the polishing pad while removing material from the planarizing surface of the polishing pad.
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising controlling a temperature of the planarizing surface to be within the range of about 305.degree. K. to about 319.degree. K. by directing a flow of gas having a predetermined gas flow temperature toward the planarizing surface while removing material from the planarizing surface of the polishing pad.
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising controlling a temperature of the planarizing surface to be within the range of about 305.degree. K. to about 319.degree. K. by controlling an air temperature of air proximate to the planarizing surface while removing material from the planarizing surface of the polishing pad.
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising controlling a temperature of a support surface supporting the planarizing surface to be within the range of about 322.degree. K. to about 328.degree. K. by electrically heating a support surface supporting the polishing pad while removing material from the planarizing surface of the polishing pad.
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising controlling a temperature of a support surface supporting the planarizing surface to be within the range of about 322.degree. K. to about 328.degree. K. by directing a flow of gas having a predetermined temperature toward the planarizing surface while removing material from the planarizing surface of the polishing pad.
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising controlling a temperature of a support surface supporting the planarizing surface to be within the range of about 322.degree. K. to about 328.degree. K. by controlling an air temperature of air proximate to the planarizing surface while removing material from the planarizing surface of the polishing pad.
A method of conditioning a planarizing surface of a polishing pad used in planarization of a substrate, comprising controlling a temperature of a support surface supporting the planarizing surface to be within the range of about 322.degree. K. to about 328.degree. K. by controlling a temperature of a conditioning disk positioned adjacent the planarizing surface and movable relative to the planarizing surface to remove material therefrom while removing material from the planarizing surface of the polishing pad.
An apparatus for planarizing a substrate, comprising:
Dependencies are inferred from the claim text.