Use of nitrides for flip-chip encapsulation

A method for producing a semiconductor device assembly, comprising:

• providing a wafer having an active surface carrying integrated circuitry and a plurality of conductive connectors extending transversely therefrom;
• coating said wafer active surface and said conductive connectors with silicon nitride;
• exposing a portion of each of said conductive connectors through said silicon nitride by physically impacting the connectors against a target surface;
• singulating said wafer into individual chips;
• providing a carrier substrate having a surface carrying terminal pads thereon;
• and
• attaching said conductive connectors to said terminal pads through said exposed portions.

A method for producing a semiconductor device assembly, comprising:

• providing a chip having an active surface including a plurality of conductive connectors extending transverseldy therefrom, wherein at least a portion of said active surface and conductive connectors is coated with silicon nitride nitride by physically impacting the connectors against a target surface;
• providing a substrate having a surface carrying terminal pads thereon;
• contacting said conductive connectors to said substrate terminal pads;
• and
• coating said substrate surface, said chip and exterior portions of each conductive connector extending between said chip and said substrate with a layer of silicon nitride.

A method for fabricating a semiconductor device assembly, comprising the steps of:

• providing a chip having an active surface including a plurality of conductive connectors;
• coating said active surface and said conductive connectors with silicon nitride;
• and
• exposing a portion of each conductive connector through said silicon nitride by physically impacting the connectors against a target surface.

A method for producing a semiconductor device assembly, comprising:

• providing a wafer having an active surface carrying integrated circuitry and a plurality of conductive connectors;
• coating said wafer active surface and said conductive connectors with silicon nitride;
• and
• exposing a portion of each of said conductive connectors through said silicon nitride by physically impacting the connectors against a target surface.