Semiconductor, semiconductor device, and method for fabricating the same

A method of manufacturing a semiconductor device comprising the steps of:

• preparing a semiconductor island comprising crystalline silicon on an insulating surface, said island containing a catalyst metal therein;
• forming a gate insulating film on said semiconductor island;
• forming a polysilicon gate electrode on said gate insulating film;
• introducing phosphorous into portions of said semiconductor island by using said gate electrode as a mask;
• and
• annealing said semiconductor island to activate said phosphorous.

A method of manufacturing a semiconductor device comprising the steps of:

• disposing a catalyst metal containing material in contact with a selected portion of a semiconductor film to be crystallized;
• crystallizing said semiconductor film by heating wherein the crystallization proceeds horizontally within said semiconductor film with a diffusion of said catalyst metal through said semiconductor film;
• introducing phosphorous into a portion of said semiconductor film after the crystallization;
• and
• annealing said semiconductor film after the introduction of said phosphorous.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film comprising amorphous silicon on an insulating surface;
• disposing a catalyst metal containing material in contact with at least a part of said semiconductor film;
• crystallizing said semiconductor film by heating wherein said catalyst metal functions to promote the crystallization during heating;
• patterning said semiconductor film into at least one semiconductor island after the crystallization;
• forming a gate insulating film on said semiconductor film;
• forming a gate electrode on said gate insulating film;
• introducing phosphorous into portions of said semiconductor island with said gate electrode as a mask;
• and
• annealing said semiconductor island to activate said phosphorous.