Electro-optical device and method of driving the same

An electro-optical device comprising:

• a substrate having an insulating surface;
• at least one thin film transistor formed on said insulating surface, said thin film transistor having a semiconductor film comprising silicon as an active layer thereof;
• an interlayer insulating film comprising an inorganic material formed on said thin film transistor;
• a first contact hole in said interlayer insulating film;
• a wiring formed on said interlayer insulating film and electrically connected to said thin film transistor through said first contact hole formed in said interlayer insulating film;
• a leveling film comprising an organic resin to provide a leveled upper surface over said thin film transistor;
• a second opening through said leveling film and said interlayer insulating film;
• and
• a pixel electrode comprising a transparent conductive oxide formed on said leveled upper surface and directly contacting said semiconductor film of said thin film transistor through said second opening.

An electro-optical device comprising:

• a substrate having an insulating surface;
• at least one thin film transistor formed on said insulating surface, said thin film transistor having a semiconductor film comprising silicon as an active layer thereof;
• an interlayer insulating film comprising an inorganic material formed on said thin film transistor;
• a first contact hole in said interlayer insulating film;
• a wiring formed on said interlayer insulating film and electrically connected to said thin film transistor through said first contact hole formed in said interlayer insulating film;
• a leveling film comprising an organic resin to provide a leveled upper surface over said thin film transistor;
• a second opening through said leveling film and said interlayer insulating film;
• and
• a pixel electrode comprising a transparent conductive oxide formed on said leveled upper surface and directly connected to said semiconductor film of said thin film transistor through said second opening,
• wherein an edge of said leveling film at a periphery of said second opening is rounded.

An electro-optical device comprising:

• a substrate having an insulating surface;
• at least one thin film transistor formed on said insulating surface, said thin film transistor having a semiconductor film comprising silicon as an active layer thereof;
• an interlayer insulating film comprising an inorganic material formed on said thin film transistor;
• a wiring formed on said interlayer insulating film and electrically connected to said thin film transistor through a contact hole formed in said interlayer insulating film;
• a leveling film comprising an organic resin provided over said thin film transistor, said interlayer insulating film and said wiring;
• an opening through said leveling film and said interlayer insulating film;
• and
• a pixel electrode comprising a transparent conductive oxide formed on said leveling film and directly connected to said semiconductor film of said thin film transistor through said opening,
• wherein a diameter of said opening is larger at an uppermost surface of said leveling film than at a lowermost surface thereof.

An electro-optical device comprising:

• a substrate having an insulating surface;
• at least one thin film transistor formed on said insulating surface, said thin film transistor having a semiconductor film comprising silicon as an active layer thereof;
• an interlayer insulating film over said thin film transistor, said interlayer insulating film comprising an inorganic material;
• a leveling film comprising an organic resin formed over said interlayer insulating film and said thin film transistor;
• and
• a pixel electrode comprising a transparent conductive oxide, formed on said leveling film and directly connected to said semiconductor film of said thin film transistor through an opening provided in said leveling film,
• wherein an edge of said organic resin film at a periphery of said opening is rounded.