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US 5,954,997 AGranted
Chemical mechanical polishing slurry useful for copper substrates
AssigneeCabot Corporation
InventorsVlasta Brusic Kaufman, Rodney C. Kistler
Life of this patent
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Abstract
A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer, a complexing agent and an abrasive, and a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.
Claims25
A chemical mechanical polishing slurry comprising:
- alumina;
- at least one oxidizer;
- a complexing agent selected from the group consisting of compounds consisting of citric acid, lactic acid, tartaric acid, succinic acid, oxalic acid, amino acids, and salts thereof;
- and
- a film forming agent wherein the chemical mechanical polishing slurry has a pH of from 7.2 to 9.0.
2 more elements
A chemical mechanical polishing slurry comprising:
- alumina;
- an oxidizing agent selected from the group consisting of hydrogen peroxide, urea hydrogen peroxided, and mixtures thereof;
- a complexing agent selected from the group consisting of citric acid, lactic acid, tartaric acid, succinic acid, oxalic acids, amino acids, salts thereof, and mixtures thereof;
- and
- benzotriazole, wherein the chemical mechanical polishing slurry has a pH of from 7.2 to 9.0.
2 more elements
A chemical mechanical polishing slurry comprising:
- from about 1.0 to about 15.0 weight percent of an alumina abrasive having a particle diameter less than 0.400 micron and a surface area ranging from about 10 m.sup.2 /g to about 250 m.sup.2 /g;
- from about 0.3 to about 12.0 weight percent hydrogen peroxide;
- from about 1.0 to about 3.0 weight percent ammonium oxalate;
- and
- from about 0.01 to about 0.2 weight percent benzotriazole, wherein the chemical mechanical polishing slurry has a pH of from 7.2 to 9.0.
2 more elements
Dependencies are inferred from the claim text.