Method for producing insulated gate thin film semiconductor device
AssigneeSemicondutor Energy Laboratory Co., Ltd.
InventorsNaoto Kusumoto, Shunpei Yamazaki
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Abstract
An amorphous semiconductor film is etched so that a width of a narrowest portion thereof is 100 .mu.m or less, thereby forming island semiconductor regions. By irradiating an intense light such as a laser into the island semiconductor regions, photo-annealing is performed to crystallize it. Then, of end portions (peripheral portions) of the island semiconductor regions, at least a portion used to form a channel of a thin film transistor (TFT), or a portion that a gate electrode crosses is etched, so that a region that the distortion is accumulated is removed. By using such semiconductor regions, a TFT is produced.
Claims6
A method of manufacturing a semiconductor device including at least one thin film transistor, said method comprising:
- forming a semiconductor film comprising silicon over a substrate;
- irradiating said semiconductor film with a linear laser beam having a line shaped cross section at said semiconductor film, thereby crystallizing said semiconductor film;
- and
- forming source, drain and channel regions of said thin film transistor within said semiconductor film,
- wherein the irradiation of said semiconductor film is conducted in such a manner that said semiconductor film is scanned with said linear laser beam in an oblique direction with respect to a carrier flow direction in said channel region.
A method of manufacturing a semiconductor device including at least one thin film transistor, said method comprising:
- forming a semiconductor film comprising silicon over a substrate;
- irradiating said semiconductor film with a linear laser beam having a line shaped cross section at said semiconductor film, thereby crystallizing said semiconductor film;
- and
- selectively etching said semiconductor film after the irradiation to form an active region of said thin film transistor,
- wherein the irradiation of said semiconductor film is conducted in such a manner that said semiconductor film is scanned with said linear laser beam in an oblique direction with respect to a carrier flow direction in said active region.
A method for producing a semiconductor device comprising:
- etching an amorphous semiconductor film to form an island semiconductor region;
- and
- irradiating light to the island semiconductor region with the light being scanned relative to the island semiconductor region in a direction oblique to a side of the island semiconductor region.
Dependencies are inferred from the claim text.