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OwnerWallace T. Y. Tanginventor
Estimating the term…
A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.
An apparatus for monitoring thickness change in a film on a substrate comprising
In a chemical mechanical polishing device for planarizing a film on a substrate, the improvement comprising
In a chemical mechanical polishing device for planarizing a film on a substrate, the improvement comprising
In a chemical mechanical polishing device for planarizing a film on a substrate comprising a polishing table, the improvement comprising
In a chemical mechanical polishing device for planarizing a film on a substrate, the improvement comprising
In a chemical mechanical polishing device for planarizing a film on a substrate comprising a polishing table, the improvement comprising
A chemical mechanical polisher for planarizing a film on a substrate comprising at least one light source that illuminates at least one section of the film on the substrate to create at least one reflected light signal received by a photodetector positioned in close proximity to the reflected light signal, which converts the reflected light signal into an electrical signal and transmits the electrical signal to an electrical slip ring, said electrical slip ring uncoupling the electrical signal from rotation and being operably connected to an analyzer that analyzes the electrical signal to monitor the progress of planarization.
An apparatus for monitoring thickness change in a film on one side of a substrate having two sides comprising a light source that illuminates a section of the film on one side of the substrate to create a reflected light signal and a decoupler which decouples the reflected light signal from rotation, said decoupler being operably connected to means for monitoring thickness change based on the reflected light signal.
An apparatus for monitoring thickness change in a film on one side of a substrate having two sides, said apparatus comprising at least one light source that illuminates at least one section of the film on the substrate to create at least one reflected light signal that is received by at least one decoupler that decouples the reflected light signal from rotation and transmits the reflected signal to at least one device that monitors thickness change based on the reflected light signal.
An apparatus for chemical mechanical polishing of a wafer, comprising
A chemical mechanical polisher for polishing a film over a substrate comprising
A method of processing a film comprising
A method of making a planarized substrate comprising
In a chemical mechanical polisher for polishing a film over a substrate, the improvement comprising a polishing pad having at least one optical access through which light can be transmitted to a portion of the film on the substrate for the purpose of detecting interferometric change in reflected light generated when light is transmitted through the polishing pad to the at least one portion of the film.
Dependencies are inferred from the claim text.