Semiconductor device including nickel formed on a crystalline silicon substrate

A semiconductor device comprising:

• an oxide layer formed in a crystalline semiconductor substrate;
• a single crystalline semiconductor layer formed on said oxide layer;
• an active layer for at least one device formed by said single crystalline semiconductor layer;
• and
• a metal element in said active layer at a concentration,
• wherein the concentration increases toward an interface opposite to said oxide layer.

An electronic apparatus having semiconductor devices comprising an oxide layer formed in a crystalline semiconductor substrate and a single crystalline semiconductor layer formed on said oxide layer, said apparatus comprising:

• an active layer for at least one device formed by said single crystalline semiconductor layer;
• and
• a metal element in said active layer with at a concentration,
• wherein the concentration increases toward the interface opposite to said silicon oxide layer.