Method and apparatus for enhancing outcome uniformity of direct-plasma processes
AssigneeLam Research Corporation
InventorPaul F. Grosshart
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Abstract
The invention provides method and apparatus that control the thermal environment of the first substrate or substrate of series of substrates treated by a uniform direct-plasma, in order to reduce first-wafer effect. By providing supplemental heat to the substrate in treatment or, equivalently, reducing the rate of heat extraction from the substrate in treatment, early in the series, the invention creates steady-state process conditions that reduce substrate-to-substrate variability in process outcome.
Claims72
A method of consecutively treating a series of substrates with plasma by a uniform direct-plasma process, the series including at least one transient substrate and at least one subsequent substrate, the method comprising the steps of:
- a. providing power to an electrode to generate plasma;
- b. placing each substrate of the series in thermal contact with the electrode in succession, thereby treating the substrates of the series with plasma by the uniform direct-plasma process;
- and
- c. controlling a process temperature during treatment of the at least one transient substrate by providing supplemental heat so as to maintain the process temperature at a substantially constant steady-state value equal to a value taken on by the process temperature during treatment of the at least one subsequent substrate.
A method of consecutively treating a series of substrates by a uniform direct-plasma etching process, the series including at least one transient substrate and at least one subsequent substrate, the method comprising the steps of:
- a. providing power to an electrode having an electrode temperature to generate plasma;
- b. placing each substrate of the series in thermal contact with the electrode in succession, thereby treating the substrates of the series with plasma by the uniform direct-plasma process;
- and
- c. controlling the electrode temperature during treatment of the at least one transient substrate by providing supplemental heat so as to maintain the electrode temperature at a substantially constant steady-state value equal to a value taken on by the electrode temperature during treatment of the at least one subsequent substrate.
An apparatus for consecutively treating a series of substrates by a uniform direct-plasma process, the series including at least one transient substrate and at least one subsequent substrate, the apparatus comprising:
- a. an electrode;
- b. a source of electromagnetic excitation, coupled to the electrode so as to provide oscillating electromagnetic energy to the electrode, thereby generating plasma;
- c. a substrate-changing system configured to consecutively position substrates of the series to be treated by the uniform direct-plasma process on the electrode;
- and
- d. a temperature-control system configured to control a process temperature by providing supplemental heat during direct-plasma treatment of the at least one transient substrate in thermal contact with the electrode so as to maintain the process temperature at a substantially constant steady-state value equal to a value taken on by the process temperature during treatment of the at least one subsequent substrate.
An apparatus for consecutively treating a series of substrates by a uniform direct-plasma etching process, the series including at least one transient substrate and at least one subsequent substrate, the apparatus comprising:
- a. an electrode having an electrode temperature;
- b. a source of electromagnetic excitation, coupled to the electrode so as to provide oscillating electromagnetic energy to the electrode, thereby generating plasma;
- c. a substrate-changing system for consecutively positioning substrates of the series to be treated by the uniform direct-plasma process on the electrode;
- and
- d. a temperature-control system cooperating with the electrode for controlling the electrode temperature by providing supplemental heat during direct-plasma treatment of the at least one transient substrate in thermal contact with the electrode, so as to maintain the electrode temperature at a substantially constant steady-state value equal to a value taken on by the process temperature during treatment of the at least one subsequent substrate.
A method of consecutively treating a series of substrates with plasma by a uniform direct-plasma process, the series including at least one transient substrate and at least one subsequent substrate, the method comprising the steps of:
- a. providing power to an electrode to generate plasma;
- b. circulating fluid having a fluid temperature through the electrode at a circulation rate;
- c. placing each substrate of the series in thermal contact with the electrode in succession, thereby treating the substrates of the series with plasma by the uniform direct-plasma process;
- and
- d. controlling the fluid temperature during treatment of the at least one transient substrate to maintain the process temperature at a substantially constant steady-state value equal to a value taken on by the process temperature during treatment of the at least one subsequent substrate.
A method of consecutively treating a series of substrates with plasma by a uniform direct-plasma process, the series including at least one transient substrate and at least one subsequent substrate, the method comprising the steps of:
- a. providing power to an electrode to generate plasma;
- b. placing each substrate of the series in thermal contact with the electrode in succession, thereby treating the substrates of the series with plasma by the uniform direct-plasma process;
- c. enhancing thermal contact between each substrate and the electrode by a contact medium having a contact temperature;
- and
- d. controlling the contact temperature during treatment of the at least one transient substrate to maintain the contact temperature at a substantially constant steady-state value equal to a value taken on by the contact temperature during treatment of the at least one subsequent substrate.
A method of consecutively treating a series of substrates with plasma by a uniform direct-plasma process, the series including at least one transient substrate and at least one subsequent substrate, the method comprising the steps of:
- a. providing power to an electrode to generate plasma;
- b. placing each substrate of the series in thermal contact with the electrode in succession, thereby treating the substrates of the series with plasma by the uniform direct-plasma process;
- and
- c. controlling a process temperature during treatment of the at least one transient substrate, by adjusting temperature-control parameters according to a preprogrammed schedule, to maintain the process temperature at a substantially constant steady-state value equal to a value taken on by the process temperature during treatment of the at least one subsequent substrate.
An apparatus for consecutively treating a series of substrates by a uniform direct-plasma process, the series including at least one transient substrate and at least one subsequent substrate, the apparatus comprising:
- a. an electrode;
- b. a source of electromagnetic excitation, coupled to the electrode so as to provide oscillating electromagnetic energy to the electrode, thereby generating plasma;
- c. a substrate-changing system configured to consecutively position substrates of the series to be treated by the uniform direct-plasma process on the electrode;
- d. a mechanism for circulating a fluid having a fluid temperature through the electrode at a circulation rate;
- and
- e. a temperature-control system configured to control a process temperature during direct-plasma treatment of the at least one transient substrate in thermal contact with the electrode so as to maintain the process temperature at a substantially constant steady-state value equal to a value taken on by the process temperature during treatment of the at least one subsequent substrate, the temperature-control system comprising a mechanism for adjusting the fluid temperature.
An apparatus for consecutively treating a series of substrates by a uniform direct-plasma process, the series including at least one transient substrate and at least one subsequent substrate, the apparatus comprising:
- a. an electrode;
- b. a source of electromagnetic excitation, coupled to the electrode so as to provide oscillating electromagnetic energy to the electrode, thereby generating plasma;
- c. a substrate-changing system configured to consecutively position substrates of the series to be treated by the uniform direct-plasma process on the electrode;
- d. a mechanism for supplying a contact medium having a contact temperature for enhancing thermal contact between the substrate in treatment and the electrode;
- and
- d. a temperature-control system configured to control the contact temperature during direct-plasma treatment of the at least one transient substrate in thermal contact with the electrode so as to maintain the contact temperature at a substantially constant steady-state value equal to a value taken on by the contact temperature during treatment of the at least one subsequent substrate.
An apparatus for consecutively treating a series of substrates by a uniform direct-plasma process, the series including at least one transient substrate and at least one subsequent substrate, the apparatus comprising:
- a. an electrode;
- b. a source of electromagnetic excitation, coupled to the electrode so as to provide oscillating electromagnetic energy to the electrode, thereby generating plasma;
- c. a substrate-changing system configured to consecutively position substrates of the series to be treated by the uniform direct-plasma process on the electrode;
- and
- d. a temperature-control system configured to control a process temperature during direct-plasma treatment of the at least one transient substrate in thermal contact with the electrode, by adjusting temperature-control parameters according to a preprogrammed schedule, so as to maintain the process temperature at a substantially constant steady-state value equal to a value taken on by the process temperature during treatment of the at least one subsequent substrate.
Dependencies are inferred from the claim text.