Process for manufacturing a semiconductor package with bi-substrate die

A method for forming a semiconductor device comprising:

• providing a first substrate comprising bond pads and contact structures, the first substrate comprising a semiconductor material, the contact structures comprising raised members formed of the semiconductor material and at least partially covered with conductive layers in electrical communication with the bond pads;
• providing a second substrate comprising semiconductor devices and contacts in electrical communication with the devices;
• placing the contact structures and contacts in physical and electrical contact;
• bonding the conductive layers to the contacts;
• providing a lead frame having lead fingers;
• wire bonding the bond pads to the lead fingers;
• and
• encapsulating the die and forming the lead fingers into package leads.

A method for forming a semiconductor device comprising:

• providing a first substrate comprising silicon having a plurality of semiconductor devices therein configured as control circuitry, the first substrate further comprising a plurality of contact structures in electrical communication with the control circuitry, and first contacts in electrical communication with the contact structures, the contact structures comprising silicon raised members at least partially covered with conductive layers;
• providing a second substrate comprising semiconductor devices in a memory cell array, and second contacts in electrical communication with the devices;
• providing a lead frame comprising lead fingers;
• bonding the conductive layers to the second contacts;
• attaching the first substrate or the second substrate to the lead frame and forming electrical connections between the first contacts and the lead fingers;
• encapsulating the first substrate and the second substrate;
• and
• forming the lead fingers into package leads.

A method for forming a semiconductor device comprising:

• providing a lead frame comprising a plurality of lead fingers;
• providing a first silicon substrate comprising first semiconductor circuitry, and first contacts in electrical communication with the first semiconductor circuitry;
• providing a second silicon substrate comprising second semiconductor circuitry, contact structures configured for mating engagement with the first contacts, and second contacts configured for wire bonding to the lead fingers, the contact structures comprising raised portions formed integrally with the second silicon substrate and at least partially covered with conductive layers in electrical communication with the second semiconductor circuitry and with the second contacts;
• bonding the conductive layers to the first contacts;
• and
• wire bonding the second contacts to the lead fingers.