Focused ion beam system
AssigneeThe Regents of the University of California
InventorsKa-Ngo Leung, Richard A. Gough, Qing Ji, Yung-Hee Yvette Lee
Life of this patent
Estimating the term…
Loading patent…
AssigneeThe Regents of the University of California
InventorsKa-Ngo Leung, Richard A. Gough, Qing Ji, Yung-Hee Yvette Lee
Estimating the term…
A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.
An exit/extraction electrode combination for an ion source, comprising:
A focused ion beam system, comprising:
A method of producing a focused ion beam, comprising:
Dependencies are inferred from the claim text.