Method to cure mobile ion contamination in semiconductor processing
AssigneeMicron Technology, Inc.
InventorRandhir P. S. Thakur
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Abstract
A first embodiment of the present invention introduces a method to cure mobile ion contamination in a semiconductor device during semiconductor processing by the steps of: forming active field effect transistors in a starting substrate; forming a first insulating layer over the field effect transistor and the field oxide; forming a second insulating layer over the first insulating layer; and performing an annealing step in a nitrogen containing gas ambient prior to exposing the insulating layer to mobile ion impurities. A second embodiment teaches a method to cure mobile ion contamination during semiconductor processing by annealing an insulating layer in a nitrogen containing gas ambient prior to exposing said insulating layer to mobile ion impurities.
Claims15
A method of making a memory device on a semiconductor substrate comprising the steps of:
- forming a memory storage cell comprising:
- a transistor having gate, source and drain electrodes, said transistor comprising said substrate, at least one storage capacitor having a storage node plate connecting to one of said source or drain electrodes;
- forming a dielectric layer over said storage cell;
- and
- heating said substrate, said storage cell and said dielectric layer in a gas ambient comprising nitrogen sufficiently to at least partially anneal said dielectric layer and said substrate.
A method of making a memory device on a semiconductor substrate comprising the steps of:
- forming a memory storage cell comprising:
- a transistor having gate, source and drain electrodes said transistor comprising said substrate, at least one storage capacitor having a storage node plate connecting to one of said source or drain electrodes;
- forming a dielectric layer over said storage cell;
- and
- annealing said dielectric layer in the presence of a gas ambient comprising at least one of nitrogen, oxygen or fluorine.
Dependencies are inferred from the claim text.