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US 5,943,597 AGranted
Bumped semiconductor device having a trench for stress relief
AssigneeMotorola, Inc.
InventorsJames H. Kleffner, Addi Burjorji Mistry
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Abstract
A bumped semiconductor device including bond pad (12) formed on a semiconductor die (10), and a passivation layer (14) overlying the semiconductor die and a portion of the bond pad (12). A solder bump (22) is formed so as to overlie the bond pad (12), and a stress isolation trench (15) is formed in the passivation layer (14), so as to surround the solder bump (22).
Claims13
A method of forming a bumped semiconductor device, the method comprising the steps of:
- providing a substrate having a bond pad;
- forming a passivation layer wherein a portion of the passivation layer overlies the bond pad;
- patterning the passivation layer to form a trench;
- and
- forming a bump overlying the bond pad, wherein the bump is surrounded by the trench.
2 more elements
Dependencies are inferred from the claim text.