Method of chemical mechanical polishing

A method of polishing a substrate, comprising the steps of:

• polishing the substrate using a first slurry solution and a polishing pad;
• applying at least one diluting solution to said polishing pad during relative movement of the substrate against said polishing pad and removing at least a portion of said first slurry solution from said polishing pad using said at least one diluting solution;
• and
• after said removing of said portion of the first slurry solution, further polishing the substrate using a second slurry solution and said polishing pad.

A method of polishing a substrate, comprising the steps of:

• polishing the substrate using a first slurry solution and a polishing pad;
• dispensing a buffer solution to said polishing pad during relative movement of the substrate against said polishing pad and removing at least a portion of said first slurry solution from said polishing pad, said buffer solution having a pH the same side of seven as that of said first slurry solution;
• after dispensing said buffer solution, applying a diluent to said polishing pad, said diluent different from said buffer solution;
• and
• after said removing of said portion of the first slurry solution, further polishing the substrate using a second slurry solution and said polishing pad.

A method of chemically-mechanically polishing a surface of a substrate, comprising the steps of:

• disposing the surface of said substrate against a polishing surface of a polishing pad;
• supplying a first chemical-mechanical slurry to the polishing pad and polishing the surface of said substrate with the polishing pad;
• after removing a portion of material from said substrate by way of the polishing with said first chemical-mechanical slurry mixture, applying a first diluting solution to the polishing pad and cleansing the polishing pad of at least a portion of said first chemical-mechanical slurry;
• dispensing a second diluting solution onto the polishing pad and cleansing the polishing pad of at least a portion of said first diluting solution, said second diluting solution different from said first diluting solution;
• and
• after said cleansing of said portion of the first diluting solution, supplying a second chemical-mechanical slurry to the polishing pad and further polishing said substrate.

A method of chemically-mechanically polishing a surface of a substrate, comprising the steps of:

• disposing the surface of said substrate against a polishing surface of a polishing pad;
• supplying a first chemical-mechanical slurry to the polishing pad and polishing the surface of said substrate with the polishing pad;
• after removing a portion of material from said substrate by way of the polishing with said first chemical-mechanical slurry mixture, applying a first diluting solution to the polishing pad and cleansing the polishing pad of at least a portion of said first chemical-mechanical slurry;
• dispensing a second diluting solution onto the polishing pad and cleansing the polishing pad of at least a portion of said first diluting solution, said second diluting solution different from said first diluting solution, and wherein one solution of said first and said second diluting solutions is a buffer solution and the other solution of said first and said second diluting solutions is a solvent;
• and
• after said cleansing of said portion of the first diluting solution, supplying a second chemical-mechanical slurry to the polishing pad and further polishing said substrate.

A method of chemically-mechanically polishing a surface of a substrate, comprising the steps of:

• disposing the surface of said substrate against a polishing surface of a polishing pad;
• supplying a first chemical-mechanical slurry to the polishing pad and polishing the surface of said substrate with the polishing pad;
• after removing a portion of material from said substrate by way of the polishing with said first chemical-mechanical slurry mixture, applying a first diluting solution to the polishing pad and cleansing the polishing pad of at least a portion of said first chemical-mechanical slurry, said first diluting solution comprising a buffer solution;
• applying a pH neutral solution to the polishing pad after said step of applying the buffer solution;
• and after said cleansing of the polishing pad of said first chemical-mechanical slurry, supplying a second chemical-mechanical slurry to the polishing pad and further polishing said substrate.

A method of chemically-mechanically polishing a surface of a substrate, comprising the steps of:

• disposing the surface of said substrate against a polishing surface of a polishing pad;
• supplying a first chemical-mechanical slurry of a first pH level to the polishing pad and polishing the surface of said substrate with the polishing pad;
• after removing a portion of material from said substrate by way of the polishing with said first chemical-mechanical slurry mixture, applying a buffer solution to the polishing pad to remove at least a portion of said first chemical-mechanical slurry from the polishing pad;
• and
• after applying said buffer solution to the polishing pad, supplying a second chemical-mechanical slurry of a second pH level to the polishing pad and further polishing said substrate, said second pH level different from said first pH level;
• said buffer solution provided a pH level within two pH units of one of said first pH level and said second pH level.

A method of chemically-mechanically polishing a surface of a substrate, comprising the steps of:

• disposing the surface of said substrate against a polishing surface of a polishing pad;
• supplying a first chemical-mechanical slurry of a first pH level to the polishing pad and polishing the surface of said substrate with the polishing pad;
• applying a first diluent to the polishing pad and cleansing the polishing pad of at least a portion of said first chemical-mechanical slurry, said first diluent having a pH level within two pH units of said first pH level;
• applying a pH neutral solution to the polishing pad and cleansing the polishing pad of at least a portion of said first diluent, said pH neutral solution selected from the group consisting essentially of deionized water, acetone, and alcohol;
• after the application of said pH neutral solution, applying a second diluent to the polishing pad, said second diluent has a pH level;
• and
• supplying a second chemical-mechanical slurry to the polishing pad and further polishing said substrate, said second chemical-mechanical slurry having a pH level within two pH units of the pH level of said second diluent.

A method of polishing a substrate, comprising the steps of:

• providing a substrate having at least one layer of material to be polished;
• polishing the substrate using a first slurry solution and a polishing pad and removing a first portion of said one layer of material from the substrate;
• removing at least a portion of said first slurry solution from the polishing pad using at least one diluting solution;
• and
• after removing first slurry solution from the polishing pad, further polishing the substrate using a second slurry solution and the polishing pad and removing a second portion of said one layer of material from the substrate.

A method of chemically-mechanically polishing a substrate, comprising the steps of:

• providing a substrate having at least a first layer of material;
• placing said substrate against a polishing surface of a polishing pad;
• polishing a surface of said substrate using the polishing pad and a first chemical-mechanical slurry and removing a first portion of said first layer of material;
• after removing the first portion of said first layer of material, applying a first diluting solution to the polishing pad and cleansing the polishing pad of at least a portion of said first chemical-mechanical slurry;
• and
• after said cleansing, removing a second portion of said first layer of material by polishing the surface of said substrate using the polishing pad and a second chemical-mechanical slurry.